Proton radiation damage in high-resistivity n-type silicon CCDs

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4669, Issue , 2002, Pages 161-171

  Bebek, C J ^a   Groom, D E ^a   Holland, S E ^a   Karcher, A ^a   Kolbe, W F ^a   Lee, J ^a   Levi, M E ^a   Palaio, N P ^a   Turko, B T ^a   Uslenghi, M C ^a   Wagner, M T ^a   Wang, G ^a  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

CCD; Charge Transfer Efficiency; High Resistivity Silicon; Radiation Damage

Indexed keywords

CHARGE TRANSFER; DOSIMETRY; ELECTRIC CONDUCTIVITY; PROTONS; RADIATION DAMAGE; SILICON;

CHARGE TRANSFER EFFICIENCY (CTE);

CHARGE COUPLED DEVICES;

EID: 18644386139     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.463422     Document Type: Article

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