Characterization of a fully depleted CCD on high resistivity silicon

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3019, Issue , 1997, Pages 183-188

  Stover, R J ^a   Wei, M ^a   Lee, Y ^a   Gilmore, D K ^a   Holland, S E ^b   Groom, D E ^b   Moses, W W ^b   Perlmutter, S ^b   Goldhaber, G ^b   Pennypacker, C ^b   Wang, N W ^b   Palaio, N ^b  

^a University of California Santa Cruz   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

Astronomical; CCD; Fully depleted; High resistivity; Lawrence Berkeley National Laboratory; Lick observatory

Indexed keywords

ABSORPTION SPECTROSCOPY; CHARGE COUPLED DEVICES; CHARGE TRANSFER; COSMOLOGY; EFFICIENCY; INFRARED DEVICES; OBSERVATORIES; SILICON; SOLID-STATE SENSORS; SUBSTRATES;

ASTRONOMICAL; FULLY DEPLETED; HIGH RESISTIVITY; LAWRENCE BERKELEY NATIONAL LABORATORY; LICK OBSERVATORY;

QUANTUM EFFICIENCY;

EID: 0000287398     PISSN: 0277786X     EISSN: 1996756X     Source Type: Conference Proceeding    
DOI: 10.1117/12.275174     Document Type: Conference Paper

References (3)

1. S. Holland, G. Goidhaber, D. E. Groom, W. W. Moses, C. R. Pennypacker, S. Perimutter, N. W. Wang, R. J. Stover, and M. Wei, "A 200 x 200 CCD Image Sensor Fabricated on High Resistivity Silicon", IEDM Technical Digest, pp. 911-914, 1996.
2. S. Holland, "Fabrication of detectors and transistors on high-resistivity silicon," Nuclear Instrum. Methods, A275, 537, 1989.
3. L. B. Robinson, R. J. Stover, J. Osborne, J. S. Miller, S. S. Vogt, and S. L. Allen, "Lick Observatory charge-coupled-device data acquisition system," Optical Engineering, 26, 795, 1987.