Experimental optimisation of high power IGBT modules performances working at the edges of their safe operating area

PESC Record - IEEE Annual Power Electronics Specialists Conference

Volumn 4, Issue , 2004, Pages 2588-2592

  Abbate, C ^a   Busatto, G ^a   Manzo, R ^a   Fratelli, L ^b   Cascone, B ^b   Giannini, G ^b   Iannuzzo, F ^a  

^a UNIVERSITY OF CASSINO AND SOUTHERN LAZIO   (Italy)

^b ANSALDOBREDA SpA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

OUTPUT CURRENTS; SAFE OPERATING AREA; SWITCHING OPERATION; TEMPERATURE LIMITS;

ELECTRIC CURRENTS; ELECTRIC LOADS; ELECTRIC LOSSES; POWER ELECTRONICS; SWITCHES; THERMAL EFFECTS;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 8744311680     PISSN: 02759306     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PESC.2004.1355238     Document Type: Conference Paper

References (11)

1. Schutze T., Berg H., Hierholzer M. "Further Improvements in the Reliability of IGBT Modules," IEEE Industry Application Society Conference, vol.2, pp. 1022-1025, St. Louis, U.S.A., 1998.
2. nd Generation of 1200A 3300V HVIGBT Module," International Conference on Power Conversion Intelligent Motion (PCIM), Nuernberg, Germany, 1999
3. Busatto G., Cascone B., Fratelli L., Balsamo M., Iannuzzo F., Velardi F. "Non-destructive high temperature characterisation of high voltage IGBTs," Microelectronics Reliability, Vol. 42, pp. 1635-1640, October 2002.
4. Lefebvre S., Miserey F. " Analysis of CIC NPT IGBT's Turn OFF operations for High Switching Current Level," IEEE Transactions on Electron Devices vol.46, pp. 1042-1049, N.5, 1999
5. Chen D.Y., Lee F.C., Carpenter G. "Non-destructive RBSOA Characterization of IGBT's and MCT's, " IEEE Transactions on Power Electronics vol.10, pp. 368-372, N.3, 1995
6. Trivedi M., Shenai K. "Investigation of the Short-Circuit Performance of an IGBT," IEEE Transactions on Electron Devices vol.45, pp. 313-320, N.1, 1998
7. Ammous A., Allard B., Morel H. "Transient Temperature Measurements and Modeling of IGBT's Under Short Circuit," IEEE Transactions on Power Electronics, vol.13, pp. 12-25, N.1, 1998
8. Trivedi M., Shenai K. "Failure Mechanisms of IGBT's Under Short-Circuit and Clamped Inductive Switching Stress," IEEE Transactions on Power Electronics, vol. 14, pp. 108-116, N.1, 1999
9. Sommer k., Goettert J., Lefranc G., Spanke R. "Multichip High Power IGBT modules for traction and industrial Application," European Power Electronics Conference, vol.1, pp. 112-116, Trondheim, 1997.
10. Busatto G., Abbate C., Cascone B., Manzo R., Fratelli L., Giannini G., Iannuzzo F., Velardi F. "Characterisation of High-Voltage IGBT Modules at High Temperature and High Currents", PEDS Conference, Singapore 2003.
11. Manzo R., Busatto G., Fratelli L., Giannini G., Nisci R., Abbate C. "Optimization of High Voltage IGBT Modules Turn-on on Inductive Load", EPE 2003 Toulouse (France).