Liquid-phase epitaxial growth of heavily doped Al p-type contact layers for SiC devices and resulting ohmic contacts

Materials Science Forum

Volumn 389-393, Issue 1, 2002, Pages 291-294

  Syrkin, A ^a   Dmitriev, V ^a   Kovalenkov, D ^a   Bauman, D ^b   Crofton, J ^c  

^a Technol and Devices Intl Inc   (United States)

^b Crystal Growth Research Center   (Russian Federation)

^c MURRAY STATE UNIVERSITY   (United States)

Author keywords

Liquid phase epitaxy; Ohmic contacts; Silicon carbide devices

Indexed keywords

ALUMINUM; CONCENTRATION (PROCESS); CONTACT RESISTANCE; OHMIC CONTACTS; SEMICONDUCTOR DOPING; SILICON CARBIDE; ELECTRIC CONTACTORS; LIQUID PHASE EPITAXY; LIQUIDS;

ATOMIC CONCENTRATION; SILICON CARBIDE DEVICES; CONTACT LAYERS; CONTACT RESISTIVITIES; HEAVILY DOPED; IMPLANTATION TECHNIQUE; P-TYPE CONTACT; SIC MATERIALS; SPECIFIC CONTACT RESISTANCES;

LIQUID PHASE EPITAXY; SILICON CARBIDE;

EID: 0038489492     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.389-393.291     Document Type: Article

References (3)

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3. V. Dmitriev and A. Cherenkov. J.Cryst.Growth, Vol. 128 (1993) p.343