On the growth of 4H-SiC by low-temperature liquid phase epitaxy in Al rich Al-Si melts

Journal of Crystal Growth

Volumn 254, Issue 1-2, 2003, Pages 123-130

  Jacquier, Christophe ^a   Ferro, Gabriel ^a   Cauwet, François ^a   Viala, Jean Claude ^a   Younes, Ghassan ^b   Monteil, Yves ^a  

^a UNIVERSITÉ CLAUDE BERNARD LYON 1   (France)

^b BEIRUT ARAB UNIVERSITY   (Lebanon)

Author keywords

A3. Liquid phase epitaxy; B1. Silicon carbide; B2. Semiconducting silicon compounds

Indexed keywords

AGGLOMERATION; ALUMINA; COOLING; LOW TEMPERATURE EFFECTS; MELTING; MORPHOLOGY; SILICON CARBIDE; WETTING;

CRYSTALLITES FORMATION;

LIQUID PHASE EPITAXY;

EID: 0038515557     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)01167-9     Document Type: Article

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