Photoluminescence of dislocations in nitrogen doped Czochralski silicon

Chinese Physics Letters

Volumn 21, Issue 11, 2004, Pages 2242-2244

  Li, Dong Sheng ^a   Yang, De Ren ^a   Leoni, E ^b   Binetti, S ^b   Pizzini, S ^b  

^a ZHEJIANG UNIVERSITY   (China)

^b UNIVERSITY OF MILANO BICOCCA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); NITROGEN; OPTICAL PROPERTIES; PRECIPITATION (CHEMICAL); SILICON;

BROAD BANDS; CZOCHRALSKI SILICON; DISLOCATIONS DENSITIES; DOPED SAMPLE; NITROGEN-DOPED; NITROGEN-DOPED CZOCHRALSKI SILICONS; OXYGEN PRECIPITATION;

DOPING (ADDITIVES);

EID: 8744283458     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/21/11/046     Document Type: Article

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