Effect of heat treatment on the optical and electrical properties of nitrogen-doped silicon samples

Microelectronic Engineering

Volumn 66, Issue 1-4, 2003, Pages 297-304

  Binetti, S ^a   Pizzini, S ^a   Somaschini, R ^a   Le Donne, A ^a   Li, Dongsheng ^b   Yang, Deren ^b  

^a INFM   (Italy)

^b ZHEJIANG UNIVERSITY   (China)

Author keywords

Nitrogen carbon complexes; Nitrogen doped silicon; Nitrogen oxygen complexes; Photoluminescence; Shallow thermal donors

Indexed keywords

ANNEALING; COMPLEXATION; CRYSTAL GROWTH FROM MELT; DOPING (ADDITIVES); EXCITONS; HEAT TREATMENT; INFRARED SPECTROSCOPY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE;

SHALLOW THERMAL DONORS;

SILICON;

EID: 0037391670     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)00921-8     Document Type: Conference Paper

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