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Physica Status Solidi (A) Applied Research

Volumn 171, Issue 1, 1999, Pages 341-346

Oxygen effect on electrical and optical properties of dislocations in silicon

(4) Feklisova, O V a Mariani Regula, G b Pichaud, B b Yakimov, E B a

a INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS (Russian Federation)

b CNRS (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH FROM MELT; DEEP LEVEL TRANSIENT SPECTROSCOPY; DISLOCATIONS (CRYSTALS); ELECTRIC PROPERTIES; OPTICAL PROPERTIES; OXYGEN; PHOTOLUMINESCENCE; SINGLE CRYSTALS;

OXYGEN EFFECT;

SEMICONDUCTING SILICON;

EID: 0032714908 PISSN: 00318965 EISSN: None Source Type: Journal
DOI: 10.1002/(SICI)1521-396X(199901)171:1<341::AID-PSSA341>3.0.CO;2-9 Document Type: Article

Times cited : (15)

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