An integrated CoolMOS FET/SiC diode module for high performance power switching

PESC Record - IEEE Annual Power Electronics Specialists Conference

Volumn 2, Issue , 2004, Pages 886-892

  Liang, Zhenxian ^a   Lu, Bing ^a   Van Wyk, Jacobus Daniel ^a   Lee, Fred C ^a  

^a VIRGINIA POLYTECHNIC INSTITUTE AND STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EMBEDDED POWER; JUNCTION CAPACITANCE; SYSTEM-IN-PACKAGE;

COST EFFECTIVENESS; ELECTRIC NETWORK TOPOLOGY; METALLIZING; MICROPROCESSOR CHIPS; PRINTED CIRCUIT BOARDS; SEMICONDUCTOR DIODES; SILICON CARBIDE; SOLDERING; SWITCHING; THERMAL STRESS; THIN FILMS; VOLTAGE CONTROL;

MOSFET DEVICES;

EID: 8744276353     PISSN: 02759306     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PESC.2004.1355536     Document Type: Conference Paper

References (10)

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2. L. Lorenz, G. Deboy, I. Zverev, "Matched pair of CoolMOSTTM transistor with SiC-Schottky diode-advantages in application," in Conf. Rec. 2001 IEEE Industry Applications Conference, pp. 376 383.
3. th Annual Applied Power Electronics and Exposition, 2003, pp. 651-657.
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8. th Annual Applied Power Electronics and Exposition, 2003, pp.490-496.
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