메뉴 건너뛰기




Volumn 1, Issue , 2002, Pages 232-239

High frequency power electronic systems are given by the newest generation of CoolMOS C3 together with SiC-Schottky diode

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POWER FACTOR; SCHOTTKY BARRIER DIODES; SHAPE MEMORY EFFECT; SILICON CARBIDE;

EID: 84961683818     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PCC.2002.998553     Document Type: Conference Paper
Times cited : (5)

References (10)
  • 1
    • 0031251517 scopus 로고    scopus 로고
    • Theory of Semiconductor Superjunction Devices
    • T. Fujihira, "Theory of Semiconductor Superjunction Devices", Jpn.J.Appl.Phys., Vol. 36, pp. 6254-6262, 1997
    • (1997) Jpn.J.Appl.Phys. , vol.36 , pp. 6254-6262
    • Fujihira, T.1
  • 3
    • 0032256942 scopus 로고    scopus 로고
    • A new generation of thigh voltage MOSFETs breaks the limit line of silicon
    • San Francisco
    • G. Deboy, M. März, J.-P. Stengl, H. Strack, J. Tihanyi and H. Weber, "A new generation of thigh voltage MOSFETs breaks the limit line of silicon", Techn. Digest IEDM 98, pp. 683-685, San Francisco 1998
    • (1998) Techn. Digest IEDM 98 , pp. 683-685
    • Deboy, G.1    März, M.2    Stengl, J.-P.3    Strack, H.4    Tihanyi, J.5    Weber, H.6
  • 4
    • 0032598956 scopus 로고    scopus 로고
    • CoolMOS™ - A new milestone in high voltage power MOS
    • Toronto
    • L. Lorenz, G. Deboy, A. Knapp and M. März, "CoolMOS™ - a new milestone in high voltage power MOS", Proc. ISPSD 99, pp. 3-10, Toronto 1999
    • (1999) Proc. ISPSD 99 , pp. 3-10
    • Lorenz, L.1    Deboy, G.2    Knapp, A.3    März, M.4
  • 5
    • 0003232234 scopus 로고    scopus 로고
    • A comparison of modern power device concepts for high voltage applications. Field stop-IGBT, compensation devices and SiC devices
    • Minneapolis
    • G. Deboy, H. Hüsken, H. Mitlehner and R. Rupp, "A comparison of modern power device concepts for high voltage applications. Field stop-IGBT, compensation devices and SiC devices", Proc. BCTM 2000, pp. 134-141, Minneapolis 2000
    • (2000) Proc. BCTM 2000 , pp. 134-141
    • Deboy, G.1    Hüsken, H.2    Mitlehner, H.3    Rupp, R.4
  • 7
    • 0032598936 scopus 로고    scopus 로고
    • Analysis of the effect of charge imbalance on the static and dynamic characteristics of the super junction MOSFET
    • Toronto
    • P.M. Shenoy, G. Dolny, "Analysis of the effect of charge imbalance on the static and dynamic characteristics of the super junction MOSFET", Proc. ISPSD 99, pp. 99-102, Toronto 1999
    • (1999) Proc. ISPSD 99 , pp. 99-102
    • Shenoy, P.M.1    Dolny, G.2
  • 8
    • 0006533158 scopus 로고    scopus 로고
    • Robust Power MOSFET - A Milestone on the way to Simplified Circuit Technology
    • L. Lorenz, M. März, H. Amann, "Robust Power MOSFET - A Milestone on the way to Simplified Circuit Technology", Elektronik, pp. 114-120 (1998)
    • (1998) Elektronik , pp. 114-120
    • Lorenz, L.1    März, M.2    Amann, H.3
  • 9
    • 84961713162 scopus 로고    scopus 로고
    • CoolMOS - A new approach towards high efficient SMPS solutions
    • Japan
    • L. Lorenz, M. März, "CoolMOS - a new approach towards high efficient SMPS solutions", IMA Techno-Frontier Week 99, Japan
    • IMA Techno-Frontier Week 99
    • Lorenz, L.1    März, M.2
  • 10
    • 5544280214 scopus 로고    scopus 로고
    • Matched pair of CoolMOS transistor with SiC Schottky Diode advantages in application
    • L. Lorenz, G. Deboy, I. Zverev, "Matched pair of CoolMOS transistor with SiC Schottky Diode advantages in application", IEEE/IAS 2001
    • IEEE/IAS 2001
    • Lorenz, L.1    Deboy, G.2    Zverev, I.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.