Matched pair of CoolMOS™ transistor with SiC-Schottky diode - advantages in application

Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)

Volumn 1, Issue , 2001, Pages 376-383

  Lorenz, L ^a   Deboy, G ^a   Zverev, I ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC FIELDS; ELECTRIC POTENTIAL; ELECTRIC SPACE CHARGE; MOSFET DEVICES; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DOPING; SILICON CARBIDE; SWITCHING;

COOLMOS TRANSISTOR; DRIFT ZONE; PULSE CURRENT CAPABILITY; ULTRAFAST SWITCHING;

POWER ELECTRONICS;

EID: 0035174741     PISSN: 01972618     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (21)

1. Characteristics and utilization of a new class of low on-resistance MOS-gated power device
2. Electronic devices for power switching and power integrated circuits: The enabling technology for clean energy
3. An investigation of the drive circuit requirements for the power insulated gate bipolar transistor (IGBT)
4. Failure dynamics of the IGBT during turn-off for unclamped inductive loading conditions
5. Theory of semiconductor superjunction devices
6. Drastic reduction of on-resistance with CoolMOS
7. A new generation of high voltage MOSFETs breaks the limit line of silicon
8. CoolMOS™ - a new milestone in high voltage power MOS
9. A comparison of modern power device concepts for high voltage applications: Field stop-IGBT, compensation devices and SiC devices
10. Kühle lösung für heiße anwendungen
11. Coole leistungs-elektronik
12. Robust power MOSFET - a milestone on the way to simplified circuit technology
13. CoolMOS - a new approach towards high efficient SMPS solutions
14. 200W SMPS demonstration board
15. 400W PFC demonstration board
16. Development and construction of a boost converter with CoolMOS and SiC diode for active PFC