Influence of device and circuit parameters on the switching losses of an ultra fast CoolMOS/SiC-diode device-set: Simulation and measurement

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2001, Pages 187-190

  Petzoldt, J ^a   Reimann, T ^a   Lorenz, L ^a   Zverev, I ^a  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC NETWORK TOPOLOGY; MATHEMATICAL MODELS; POWER ELECTRONICS; SCHOTTKY BARRIER DIODES; SILICON CARBIDE;

CIRCUIT PARAMETERS;

MOS DEVICES;

EID: 0034835872     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)