Sublimation growth of SiC crystal using modified crucible design on 4H-SiC {03-38} substrate and defect analysis

Materials Science Forum

Volumn 457-460, Issue I, 2004, Pages 107-110

  Furusho, T ^a   Takagi, H ^a   Ota, S ^a   Shiomi, H ^b   Nishino, S ^a  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

^b SiXON Ltd   (Japan)

Author keywords

4H SiC 03 38 ; Micropipe; Stacking fault; Sublimation growth

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH; RAMAN SCATTERING; SILICON WAFERS; SUBLIMATION; THERMAL CONDUCTIVITY;

MICROPIPE; STACKING FAULT; SUBLIMATION GROWTH;

SILICON CARBIDE;

EID: 8744272396     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.107     Document Type: Conference Paper

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