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Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 71-74

Uniformization of Radial Temperature Gradient in Sublimation Growth of SiC

(5) Tanaka, H a Nishiguchi, T a Sasaki, M a Ohshima, S a Nishino, S a

a KYOTO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

Diameter Expansion; Sublimation; Tantalum; Temperature Gradient

Indexed keywords

CRYSTAL GROWTH; SUBLIMATION; SUBSTRATES; THERMAL STRESS;

SUBLIMATION GROWTH;

SILICON CARBIDE;

EID: 0242413809 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.433-436.71 Document Type: Conference Paper

Times cited : (3)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.