Characterization of high-density current stressed IGBTs and simulation with an adapted SPICE sub-circuit

Microelectronics Reliability

Volumn 40, Issue 6, 2000, Pages 973-979

  Maouad, A ^a,b   Hoffmann, A ^a   Khoury, A ^b   Charles, J P ^a  

^a Ctr Lorrain d'Optique d'E   (France)

^b LEBANESE UNIVERSITY   (Lebanon)

Author keywords

[No Author keywords available]

Indexed keywords

AGING OF MATERIALS; COMPUTER SIMULATION; COMPUTER SOFTWARE; CURRENT DENSITY; DEGRADATION; GATES (TRANSISTOR); HOT CARRIERS; INTERFACES (MATERIALS); MOSFET DEVICES; SEMICONDUCTOR DEVICE TESTING; SEMICONDUCTOR JUNCTIONS; STRESS ANALYSIS;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT); SOFTWARE PACKAGE SPICE;

BIPOLAR TRANSISTORS;

EID: 8744271292     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2714(00)00002-0     Document Type: Article

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