A simplified spice model for IGBT

Active and Passive Electronic Components

Volumn 21, Issue 4, 1998, Pages 279-292

  Haddi, A ^a   Maouao, A ^a   Elmazria, O ^a   Hoffmann, A ^a   Charles, J P ^a  

^a SUPELEC   (France)

Author keywords

Insulated gate bipolar transistor; Simulation; Spice

Indexed keywords

EID: 0343071821     PISSN: 08827516     EISSN: None     Source Type: Journal    
DOI: 10.1155/1998/89240     Document Type: Article

References (10)

1. Baliga, B. J. (1984), "The Insulated Gate Transistor, a New Three-Termmal-MOS-Controlled Bipolar Power Device", IEEE Trans. on Electron Devices, ED-31, 1790-1828.
2. Hefner, A. R. (1988). "An Analogycal Model for the Steady-state and Transistent of the Power IGBT", Solid-State Electronic, 31(10), 1513.
3. Silvaco International, SmartSpice, UTMOST III Modeling, User Manual, Santa Clara (1995).
4. Mitter, C. S., Hefner, A. R., Chen, D. Y. and Lee, F. C. (1993). "Insulated Gate Bipolar Transistor (IGBT) Modeling using IG-SPICE", IEEE Trans. on Industry Applications, 30(1), 24-33.
5. Petrie, A. F. and Hymowitz, C. (1995). "A SPICE Model for IGBTs", IEEE Applied Power Electronics Conference, pp. 147-152.
6. Shen, Z. and Chow, T. P. (1993). "Modeling and Characterisation of the Insulated Gate Bipolar Transistor (IGBT) for SPICE Simulation", IEEE International Symposium on Power Semiconductor Devices and ICs, pp. 165-170.
7. Protiwa, F. F., Apeldoorn, O. and Groos, N. (1993). "New IGBT Model for PSPICE", European Power Electronics Conference, pp. 226-231.
8. Elmazria, O., "Caractérisation et simulation de I'IGBT dans le but d'optimiser ses performances au Moyen de l'irradiation par électrons1". Doctorate Thesis, Metz University, France, Nov. 1996, 120 pages.
9. Charlot, J. J. and Pesic, I. (1994). "SPICE and User developed Modeling. Application: Implementation of an IGBT model in SmartSpice", Private Communication, Silvaco.
10. Chung-Min Liu. and James B. Kuo. (1995). "Turn-off Transient Analysis of a Double Diffused Metal-Oxide-Semiconductor Device Considering Quasi Saturation", J. Appl. Phys., 34, Part 1, No. 2B, 869-873.