Temperature dependence of hot carrier induced MOSFET degradation at low gate bias

Microelectronics Reliability

Volumn 39, Issue 6-7, 1999, Pages 809-814

  Hong, Sung H ^a   Nam, Sang M ^a   Yun, Byung O ^a   Lee, Byung J ^a   Yu, Chong G ^a   Park, Jong T ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; ELECTRIC CURRENTS; GATES (TRANSISTOR); HIGH TEMPERATURE OPERATIONS; HOT CARRIERS; SUBSTRATES;

GATE BIAS; SUBSTRATE CURRENT;

MOSFET DEVICES;

EID: 0033147366     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(99)00105-5     Document Type: Article

References (11)

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