Total dose effects on power-MOSFET switching converters

Microelectronics Reliability

Volumn 38, Issue 12, 1998, Pages 1935-1939

  Pizano, J E ^a   Ma, T H ^a   Attia, J O ^b   Schrimpf, R D ^c   Galloway, K F ^c   Witulski, A F ^a  

^a University of Arizona   (United States)

^b Texas A M University System   (United States)

^c VANDERBILT UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; COBALT; DEGRADATION; ENERGY CONVERSION; IONIZING RADIATION; POWER CONVERTERS; POWER ELECTRONICS; THRESHOLD VOLTAGE;

BOOST CONVERTERS; BUCK CONVERTERS; SWITCHING CONVERTERS;

MOSFET DEVICES;

EID: 0032314777     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(98)00154-1     Document Type: Article

References (14)

1. Hower PL. A comparison of bipolar and field-effect transistors as power switches. Power Conversion International 1981;7:45.
2. Grant DA, Gowar J. Power MOSFETs: In: Theory and Applications. New York: Wiley, 1989.
3. Galloway KF, Schrimpf RD. Overview of space radiation effects on power MOSFETs. Annales de Physique 1989;14:119-28.
4. Cheng H, Milnes AG. Power MOSFET characteristics with modified SPICE modeling. Solid-State Electron 1982;25:1209-12.
5. Minasian RA. Computer-aided simulation of power MOSFET switch-mode convertors. Electron Lett 1984;20:454-6.
6. Lauritzen PO, Shi F. Computer simulation of power MOSFETs at high switching frequencies. In: Proc Power Convers Int Conf. 1985:372-83.
7. Timmes FX, Dodt DT, Maluf N. Circuit simulation of power MOSFETs. In: Conf Rec IEEE Ind App Soc Ann Mtg. 1986:393-95.
8. Dolny GM, Ronan HR, Wheatley CF Jr. A SPICE II subcircuit representation for power MOSFETs using empirical methods. In: Proc Power Electron Design Conf. 1985:147-53.
9. International Rectifier. Spice Computer Models for HEXFET Power MOSFETs, 1987.
10. Cuk S, Middlebrook RD. Basics of switched-mode power conversion: topologies, magnetics, and control. In: Advances in Switched Mode Power Conversion, vol. 2. Pasadena, CA: TESLAco, 1981.
11. Galloway KF, Schrimpf RD. MOS device degradation due to total-dose ionizing radiation in the natural space environment: a review. Microelectronics J 1990;21:67-81.
12. Zupac D, Galloway KF, Schrimpf RD, Augier P. Radiation-induced mobility degradation in p-channel double-diffused metal-oxide-semiconductor power transistors at 300 K and 77 K. J Appl Phys 1993;73:2910-5.
13. Zupac D, Galloway KF, Khosropour P, Anderson SR, Schrimpf RD, Calvel P. Separation of effects of oxidetrapped charge and interface-trapped charge on mobility in irradiated power MOSFETs. IEEE Trans Nucl Sci 1993;40:1307-15.
14. Wheatley CF Jr, Ronan HR Jr, Dolny GM. Spicing-up SPICE II Software for Power MOSFET Modeling. Harris Semiconductor Application Note, 1994; no. AN8610.1.