Modelling hot-carrier degradation of LDD NMOSFETs by using a high-resolution measurement technique

Microelectronics Reliability

Volumn 39, Issue 6-7, 1999, Pages 785-790

  Dreesen, R ^a   Croes, K ^a   Manca, J ^a   De Ceuninck, W ^a   De Schepper, L ^a   Pergoot, A ^b   Groeseneken, G ^c  

^a HASSELT UNIVERSITY   (Belgium)

^b LUCENT TECHNOLOGIES   (United States)

^c IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

AGING OF MATERIALS; CURVE FITTING; DEGRADATION; ELECTRIC VARIABLES MEASUREMENT; ELECTRON ENERGY LEVELS; ELECTRON TRAPS; HOT CARRIERS; LEAST SQUARES APPROXIMATIONS; MATHEMATICAL MODELS; SEMICONDUCTOR DEVICE MODELS;

AGEING PARAMETER; HIGH RESOLUTION MEASUREMENT TECHNIQUE; HOT CARRIER DEGRADATION; LIGHTLY DOPED DRAIN STRUCTURE; NONLINEAR LEAST SQUARE FIT;

MOSFET DEVICES;

EID: 0033145297     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(99)00101-8     Document Type: Article

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