Physical limits and lifetime limitations of semiconductor devices at high temperatures

Microelectronics Reliability

Volumn 39, Issue 6-7, 1999, Pages 1113-1120

  Wondrak, W ^a  

^a DAIMLER AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; LEAKAGE CURRENTS; MOSFET DEVICES; SEMICONDUCTOR MATERIALS; SILICON ON INSULATOR TECHNOLOGY; THERMAL EFFECTS; THRESHOLD VOLTAGE;

HIGH TEMPERATURE DEVICES; INSULATED GATE BIPOLAR TRANSISTORS;

SEMICONDUCTOR DEVICES;

EID: 0033143224     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(99)00158-4     Document Type: Article

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