Investigation of rapid thermal annealed pn-junctions in SiC

Materials Science Forum

Volumn 457-460, Issue II, 2004, Pages 1073-1076

  Rambach, M ^a   Weiss R ^a   Frey, L ^a   Bauer, A J ^b   Ryssel, H ^b  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

Author keywords

Breakdown voltage; Edge termination; Pn junction; Sheet resistance; Surface roughness

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL ACTIVATION; EPITAXIAL GROWTH; ION IMPLANTATION; RAPID THERMAL ANNEALING; SEMICONDUCTOR DOPING; SILICON CARBIDE; SURFACE ROUGHNESS;

EDGE TERMINATION; PN-JUNCTION; ROOT MEAN SQUARE (RMS); SHEET RESISTANCE;

SEMICONDUCTOR JUNCTIONS;

EID: 8744264042     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.1073     Document Type: Conference Paper

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