Electrical Activation of Ion-Implanted Nitrogen and Aluminum in 4H-SiC by Excimer Laser Annealing

Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 605-608

  Tanaka, Yasunori ^a,b   Tanoue, Hisao ^a   Arai, Kazuo ^a,b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b Ultra Low Loss Pwr Device TRB   (Japan)

Author keywords

Aluminum; Electrical Activation; Excimer Laser Annealing; Ion Implantation; Nitrogen

Indexed keywords

ALUMINUM; ANNEALING; ELECTRIC RESISTANCE; EXCIMER LASERS; ION IMPLANTATION; IRRADIATION; NITROGEN; THERMAL EFFECTS;

ELECTRICAL ACTIVATION;

SILICON CARBIDE;

EID: 0242581011     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.433-436.605     Document Type: Conference Paper

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