Characteristics of an N2O radical oxide grown by using electron cyclotron resonance radical oxidation and its application to 50-nm MOSFETs with floating polysilicon spacers

Journal of the Korean Physical Society

Volumn 41, Issue 6, 2002, Pages 927-931

  Han, Sangyeon ^a   Chang, Sung Il ^a   Shin, Hyungcheol ^a   Lee, Jongho ^b  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Kyungpook National University   (South Korea)

Author keywords

50 nm; ECR plasma; MOSFET; Polysilicon spacer; Radical oxide; Shallow junction

Indexed keywords

EID: 0036946639     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

References (9)

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