High CW power 0.3 μm gate AlGaN/GaN HEMTs grown by MBE on sapphire

Materials Science Forum

Volumn 457-460, Issue II, 2004, Pages 1629-1632

  Desmaris, V ^a   Eriksson, J ^a   Rorsman, N ^a   Zirath, H ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

Algan; Gan; HEMT; HFET; Power

Indexed keywords

ELECTRIC POTENTIAL; FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; PHOTOLITHOGRAPHY; RAPID THERMAL ANNEALING; SEMICONDUCTOR DOPING; VELOCITY MEASUREMENT;

FIELD MOBILITY; SELF-HEATING;

MOLECULAR BEAM EPITAXY;

EID: 8644284144     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.1629     Document Type: Conference Paper

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