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Volumn , Issue , 2005, Pages 1-234

Multigroup equations for the description of the particle transport in semiconductors

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EID: 85115672372     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1142/5843     Document Type: Book
Times cited : (17)

References (98)
  • 1
    • 0027544614 scopus 로고
    • Formulation of the Boltzmann equation in terms of scattering matrices
    • ALAM M. A., STETTLER M. S. and LUNDSTROM M. S., Formulation of the Boltzmann equation in terms of scattering matrices, Solid-State Electronics, 36 (1993), 263-271.
    • (1993) Solid-State Electronics , vol.36 , pp. 263-271
    • Alam, M.A.1    Stettler, M.S.2    Lundstrom, M.S.3
  • 2
    • 0023382853 scopus 로고
    • Drift and diffusion of charge carriers in silicon and their empirical relation to the electric field
    • An OMAR M. and REGGIANI L., Drift and diffusion of charge carriers in silicon and their empirical relation to the electric field, Solid-state Electronics, 30 (1987), 693-697.
    • (1987) Solid-state Electronics , vol.30 , pp. 693-697
    • An Omar, M.1    Reggiani, L.2
  • 4
    • 85032069152 scopus 로고
    • Electronic properties of two-dimensional systems
    • ANDO T., FOWLER A.. and STERN F., Electronic properties of two-dimensional systems, Rev. Mod. Phys., 54 (1982), 437-672.
    • (1982) Rev. Mod. Phys. , vol.54 , pp. 437-672
    • Ando, T.1    Fowler, A.2    Stern, F.3
  • 6
    • 0021480313 scopus 로고
    • Matrix determination of the stationary solution of the Boltzmann equation for hot carriers in semiconductors
    • AUBERT J. P., VAISSIERE J. V. and NOUGIER J. P., Matrix determination of the stationary solution of the Boltzmann equation for hot carriers in semiconductors, J. Appl. Phys., 56 (1984), 1128-1132.
    • (1984) J. Appl. Phys. , vol.56 , pp. 1128-1132
    • Aubert, J.P.1    Vaissiere, J.V.2    Nougier, J.P.3
  • 7
    • 4544251364 scopus 로고    scopus 로고
    • A semicontinuous formulation of the Bloch-Boltzmann-Peierls equations
    • AUER C., SCHURRER F. and KOLLER W., A semicontinuous formulation of the Bloch-Boltzmann-Peierls equations, SI AM J. Appl. Math., 64 (2004), 1457-1475.
    • (2004) SI AM J. Appl. Math. , vol.64 , pp. 1457-1475
    • Auer, C.1    Schurrer, F.2    Koller, W.3
  • 8
    • 36149012552 scopus 로고
    • Deformation potentials and mobilities in non-polar crystals
    • BARDEEN J. and SHOCKLEY W., Deformation potentials and mobilities in non-polar crystals, Phys. Rev., 80 (1950), 72-80.
    • (1950) Phys. Rev. , vol.80 , pp. 72-80
    • Bardeen, J.1    Shockley, W.2
  • 9
    • 0035535380 scopus 로고    scopus 로고
    • Phonons and related crystal properties from density-functional perturbation theory
    • BARONI S., DE GIRONCOLI S., CORSO A. D. and GIANOZZI P., Phonons and related crystal properties from density-functional perturbation theory, Rev. Mod. Phys., 73 (2001), 515-562.
    • (2001) Rev. Mod. Phys. , vol.73 , pp. 515-562
    • Baroni, S.1    De Gironcoli, S.2    Corso, A.D.3    Gianozzi, P.4
  • 10
    • 0003864761 scopus 로고
    • Prentice-Hall, Englewood Cliffs
    • BOHM D., Quantum theory, Prentice-Hall, Englewood Cliffs, (1951).
    • (1951) Quantum theory
    • Bohm, D.1
  • 11
    • 0000642431 scopus 로고
    • Scattering by ionized impurities in semiconductors
    • BROOKS H. and HERRING C., Scattering by ionized impurities in semiconductors, Phys. Rev., 83 (1951), 879.
    • (1951) Phys. Rev. , vol.83 , pp. 879
    • Brooks, H.1    Herring, C.2
  • 12
    • 0039323857 scopus 로고
    • Path variable formulation of the hot carrier problem
    • BUDD H., Path variable formulation of the hot carrier problem, Phys. Rev., 158 (1967), 798-804.
    • (1967) Phys. Rev. , vol.158 , pp. 798-804
    • Budd, H.1
  • 13
    • 0034670725 scopus 로고    scopus 로고
    • Full band polar optical phonon scattering analysis and negative differential conductivity in wurtzite GaN
    • BULUTAY C, RIDLEY B. K. and ZAKHLENIUK N. A., Full band polar optical phonon scattering analysis and negative differential conductivity in wurtzite GaN, Phys. Rev. B, 62 (2000), 15754-15763
    • (2000) Phys. Rev. B , vol.62 , pp. 15754-15763
    • Bulutay, C.1    Ridley, B.K.2    Zakhleniuk, N.A.3
  • 14
    • 85115721411 scopus 로고    scopus 로고
    • Deterministic solution of the Boltzmann-Poisson system in GaAs-based semiconductors
    • CÄCERES M. J., CARRILLO J. A. and MAJORANA A., Deterministic solution of the Boltzmann-Poisson system in GaAs-based semiconductors, HYKE preprint HYKE2004-111, www.hyke.org (2004)
    • (2004) HYKE preprint HYKE2004-111
    • Cäceres, M.J.1    Carrillo, J.A.2    Majorana, A.3
  • 15
    • 51249161809 scopus 로고
    • Multigroup approach to the non-linear extended Boltzmann equation
    • CARAFFINI G. L., GANAPOL B. and SPIGA G. A., Multigroup approach to the non-linear extended Boltzmann equation, II Nouvo Cimento, 17 (1995), 129-142.
    • (1995) II Nouvo Cimento , vol.17 , pp. 129-142
    • Caraffini, G.L.1    Ganapol, B.2    Spiga, G.A.3
  • 16
    • 22544464100 scopus 로고    scopus 로고
    • A WENO-solver for ID non-stationary Boltzmann-Poisson systems for semiconductor devices
    • CARRILLO J. A., GAMBA I.M., MAJORANA A. and SHU C.-W., A WENO-solver for ID non-stationary Boltzmann-Poisson systems for semiconductor devices, J. Comp. Electr., 1 (2002), 365-375.
    • (2002) J. Comp. Electr. , vol.1 , pp. 365-375
    • Carrillo, J.A.1    Gamba, I.M.2    Majorana, A.3    Shu, C.-W.4
  • 17
    • 0037455598 scopus 로고    scopus 로고
    • A WENO-solver for the transients of Boltzmann-Poisson system for semiconductor devices: Performance and comparisons with Monte Carlo methods
    • CARRILLO J. A., GAMBA I.M., MAJORANA A. and SHU C.-W., A WENO-solver for the transients of Boltzmann-Poisson system for semiconductor devices: performance and comparisons with Monte Carlo methods, J. Corn-put. Phys., 184 (2003), 498-525.
    • (2003) J. Corn-put. Phys. , vol.184 , pp. 498-525
    • Carrillo, J.A.1    Gamba, I.M.2    Majorana, A.3    Shu, C.-W.4
  • 18
    • 29144517213 scopus 로고    scopus 로고
    • A direct solver for 2D non-stationary Boltzmann-Poisson systems for semiconductor devices: A MESFET simulation by WENO-Boltzmann schemes
    • CARRILLO J. A., GAMBA I.M., MAJORANA A. and SHU C.-W., A direct solver for 2D non-stationary Boltzmann-Poisson systems for semiconductor devices: a MESFET simulation by WENO-Boltzmann schemes, J. Comp. Electr., 2 (2003), 375-380.
    • (2003) J. Comp. Electr. , vol.2 , pp. 375-380
    • Carrillo, J.A.1    Gamba, I.M.2    Majorana, A.3    Shu, C.-W.4
  • 19
    • 36049057570 scopus 로고
    • Band structures and pseudo-potential form factors for fourteen semiconductors of the diamond and zinc-blende structures
    • COHEN M. L. and BERGSTRESSER T. K., Band structures and pseudo-potential form factors for fourteen semiconductors of the diamond and zinc-blende structures, Phys. Rev., 141 (1966), 789-796.
    • (1966) Phys. Rev. , vol.141 , pp. 789-796
    • Cohen, M.L.1    Bergstresser, T.K.2
  • 21
    • 0000803795 scopus 로고
    • High-field transport in n-type GaAs
    • CONWELL E. M. and VASSEL M. O., High-field transport in n-type GaAs, Phys. Rev., 166 (1968), 797-821.
    • (1968) Phys. Rev. , vol.166 , pp. 797-821
    • Conwell, E.M.1    Vassel, M.O.2
  • 25
    • 0242361061 scopus 로고    scopus 로고
    • A multicell matrix solution to the Boltzmann equation applied to the anisotropic electron transport in silicon
    • ERTLER C. and SCHÜRRER F., A multicell matrix solution to the Boltzmann equation applied to the anisotropic electron transport in silicon, J. Phys. A: Math. Gen., 36 (2003), 8759-8774.
    • (2003) J. Phys. A: Math. Gen. , vol.36 , pp. 8759-8774
    • Ertler, C.1    Schürrer, F.2
  • 26
    • 0001727886 scopus 로고
    • Upwind finite difference solution of Boltzmann equations applied to electron transport in semiconductor devices
    • FATEMI E. and ODEH E., Upwind finite difference solution of Boltzmann equations applied to electron transport in semiconductor devices, J. Comput. Phys., 108 (1993), 209-217.
    • (1993) J. Comput. Phys. , vol.108 , pp. 209-217
    • Fatemi, E.1    Odeh, E.2
  • 27
    • 0014846935 scopus 로고
    • Monte Carlo determination of electron transport properties in Gallium Arsenide
    • FAWCETT W., BOARDMAN A. D. and SWAIN S., Monte Carlo determination of electron transport properties in Gallium Arsenide, J. Phys. Chem. Solids, 31 (1970), 1963-1990.
    • (1970) J. Phys. Chem. Solids , vol.31 , pp. 1963-1990
    • Fawcett, W.1    Boardman, A.D.2    Swain, S.3
  • 28
    • 0347965971 scopus 로고
    • Calculation of hot electron diffusion rate in GaAs
    • FAWCETT W. and REES H. D., Calculation of hot electron diffusion rate in GaAs, Phys. Lett. A, 29 (1969), 578-579.
    • (1969) Phys. Lett. A , vol.29 , pp. 578-579
    • Fawcett, W.1    Rees, H.D.2
  • 29
    • 0004254423 scopus 로고
    • Maxwell Macmillian Editions, New York
    • FERRY D. K., Semiconductors, Maxwell Macmillian Editions, New York, (1991).
    • (1991) Semiconductors
    • Ferry, D.K.1
  • 32
    • 0026116329 scopus 로고
    • Monte Carlo simulation of transport in technologically significant semiconductors the diamond and zinc-blende structures. Part I: Homogeneous transport
    • FISCETTI M. V., Monte Carlo simulation of transport in technologically significant semiconductors the diamond and zinc-blende structures. Part I: homogeneous transport, IEEE Trans. Electron. Devices, 38 (1991), 634-649.
    • (1991) IEEE Trans. Electron. Devices , vol.38 , pp. 634-649
    • Fiscetti, M.V.1
  • 33
    • 0007129542 scopus 로고
    • The mean free path of electrons in polar crystals
    • FROHLICH H. and MOTT N. F., The mean free path of electrons in polar crystals, Proc. Roy. Soc. A, 171 (1939), 496.
    • (1939) Proc. Roy. Soc. A , vol.171 , pp. 496
    • Frohlich, H.1    Mott, N.F.2
  • 34
    • 2542622968 scopus 로고    scopus 로고
    • Moment equations of a conservative multigroup approximation to the nonlinear 3D Boltzmann equation
    • GALLER M., SCHURRER F. and ROSSANI A., Moment equations of a conservative multigroup approximation to the nonlinear 3D Boltzmann equation, Trans. Theo. Stat. Phys., 33 (2004), 203-221.
    • (2004) Trans. Theo. Stat. Phys. , vol.33 , pp. 203-221
    • Galler, M.1    Schurrer, F.2    Rossani, A.3
  • 37
    • 33744678467 scopus 로고
    • Ab initio calculation of phonon dispersions in semiconductors
    • GIANNOZZI P., DE GIRONCOLI S., PAVONE P. and BARONI S., Ab initio calculation of phonon dispersions in semiconductors, Phys. Rev. B, 43 (1991), 7231-7242.
    • (1991) Phys. Rev. B , vol.43 , pp. 7231-7242
    • Giannozzi, P.1    De Gironcoli, S.2    Pavone, P.3    Baroni, S.4
  • 38
    • 20744439028 scopus 로고
    • Microwave measurements of the velocity-field characteristic of n-type InP
    • GLOVER G. H., Microwave measurements of the velocity-field characteristic of n-type InP, Appl. Phys. Lett, 20 (1972), 224-225.
    • (1972) Appl. Phys. Lett , vol.20 , pp. 224-225
    • Glover, G.H.1
  • 39
    • 0027576244 scopus 로고
    • Two-dimensional MOS-FET simulation by means of a multidimensional spherical harmonics expansion of the Boltzmann transport equation
    • GNUDI A., VENTURA D., BACCARINI G. and ODEH F., Two-dimensional MOS-FET simulation by means of a multidimensional spherical harmonics expansion of the Boltzmann transport equation, Solid-State electronics, 35 (1993), 575-581.
    • (1993) Solid-State electronics , vol.35 , pp. 575-581
    • Gnudi, A.1    Ventura, D.2    Baccarini, G.3    Odeh, F.4
  • 41
    • 0027607499 scopus 로고
    • A generalized Legendre polynomials/spare matrix approach for determining the distribution function in non-polar semiconductors
    • HENNACY K. A. and GOLDSMAN N., A generalized Legendre polynomials/spare matrix approach for determining the distribution function in non-polar semiconductors, Solid-State electronics, 36 (1993), 869-877.
    • (1993) Solid-State electronics , vol.36 , pp. 869-877
    • Hennacy, K.A.1    Goldsman, N.2
  • 42
    • 0029359452 scopus 로고
    • Deterministic MOSFET simulation using a generalized spherical harmonics expansion of the Boltzmann equation
    • HENNACY K. A., Wu Y.-J., GOLDSMAN N. and MAYERGOYZ I. D., Deterministic MOSFET simulation using a generalized spherical harmonics expansion of the Boltzmann equation, Solid-State electronics, 38 (1995), 1485-1495.
    • (1995) Solid-State electronics , vol.38 , pp. 1485-1495
    • Hennacy, K.A.1    Wu, Y.-J.2    Goldsman, N.3    Mayergoyz, I.D.4
  • 43
    • 0342778729 scopus 로고
    • Piezoelectric scattering and phonon drag in ZnO and CdS
    • HUTSON A. R., Piezoelectric scattering and phonon drag in ZnO and CdS, J. Appl. Phys., 32 (1961), 2287-2292.
    • (1961) J. Appl. Phys. , vol.32 , pp. 2287-2292
    • Hutson, A.R.1
  • 45
    • 35949025517 scopus 로고
    • The Monte Carlo method for the solution of the charge transport in semiconductors with application to covalent materials
    • JACOBONI C. and REGGIANI L., The Monte Carlo method for the solution of the charge transport in semiconductors with application to covalent materials, Rev. Mod. Phys., 55 (1983), 645-705.
    • (1983) Rev. Mod. Phys. , vol.55 , pp. 645-705
    • Jacoboni, C.1    Reggiani, L.2
  • 46
    • 0030161771 scopus 로고    scopus 로고
    • Efficient implementation of weighted ENO schemes
    • JIANG G. and SHU C.-W., Efficient implementation of weighted ENO schemes, J. Comput. Phys., 126 (1996), 202-228.
    • (1996) J. Comput. Phys. , vol.126 , pp. 202-228
    • Jiang, G.1    Shu, C.-W.2
  • 49
    • 36049057599 scopus 로고
    • Anharmonic decay of optical phonons
    • KLEMENS P. G., Anharmonic decay of optical phonons, Phys. Rev., 148 (1966), 845-848.
    • (1966) Phys. Rev. , vol.148 , pp. 845-848
    • Klemens, P.G.1
  • 51
    • 21544477731 scopus 로고
    • Electronic transport studies of bulk zincblende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone bandstructure
    • KOLNIK J., OGUZMAN I. H., BRENNAN K. F., WANG R., RUDEN P. P. and WANG Y., Electronic transport studies of bulk zincblende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone bandstructure, J. Appl. Phys., 78 (1995), 1033-1038.
    • (1995) J. Appl. Phys. , vol.78 , pp. 1033-1038
    • Kolnik, J.1    Oguzman, I.H.2    Brennan, K.F.3    Wang, R.4    Ruden, P.P.5    Wang, Y.6
  • 55
    • 4243948738 scopus 로고
    • Raman scattering from nonequilibrium LO phonons with picosecond resolution
    • VON DER LINDE D., KUHL J. and KLINGENBERG H., Raman scattering from nonequilibrium LO phonons with picosecond resolution, Phys. Rev. Lett., 44 (1980), 1505-1508.
    • (1980) Phys. Rev. Lett. , vol.44 , pp. 1505-1508
    • Von Der Linde, D.1    Kuhl, J.2    Klingenberg, H.3
  • 56
    • 0001149918 scopus 로고
    • Monte Carlo studies of nonequilibrium phonon effects in polar semiconductors and quantum wells. I. Laser photoexcitation
    • LUGLI P., BORDONE P., REGGIANI L., RIEGER M., KOCEVAR P., GOODNICK S. M., Monte Carlo studies of nonequilibrium phonon effects in polar semiconductors and quantum wells. I. Laser photoexcitation, Phys. Rev. B, 39 (1989), 7852-7865.
    • (1989) Phys. Rev. B , vol.39 , pp. 7852-7865
    • Lugli, P.1    Bordone, P.2    Reggiani, L.3    Rieger, M.4    Kocevar, P.5    Goodnick, S.M.6
  • 58
    • 0035842863 scopus 로고    scopus 로고
    • A finite difference scheme solving the Boltzmann-Poisson system for semiconductor devices
    • MAJORANA A. and PIDATELLA R. M., A finite difference scheme solving the Boltzmann-Poisson system for semiconductor devices, J. Comput. Phys., 174 (2001), 649-668.
    • (2001) J. Comput. Phys. , vol.174 , pp. 649-668
    • Majorana, A.1    Pidatella, R.M.2
  • 59
    • 0017456166 scopus 로고
    • Transient and steady-state electron transport properties of GaAs and InP
    • MALONEY T. J. and FREY J., Transient and steady-state electron transport properties of GaAs and InP, J. Appl. Phys., 48 (1977), 781-787.
    • (1977) J. Appl. Phys. , vol.48 , pp. 781-787
    • Maloney, T.J.1    Frey, J.2
  • 61
    • 0039209282 scopus 로고
    • Structural and electronic properties of narrow-band-gap semiconductors: InP, InAs, InSb
    • MASSIDDA S., CONTINENZA A., FREEMAN A. J., PASCALE T. M., MELONI F. and SERRA M., Structural and electronic properties of narrow-band-gap semiconductors: InP, InAs, InSb, Phys. Rev. B, 41 (1990), 12079-12085.
    • (1990) Phys. Rev. B , vol.41 , pp. 12079-12085
    • Massidda, S.1    Continenza, A.2    Freeman, A.J.3    Pascale, T.M.4    Meloni, F.5    Serra, M.6
  • 65
    • 0000783469 scopus 로고
    • Temperature dependence of the first order Raman scattering by phonons in Si, Ge and a-Sn: Anharmonic effects
    • MENENDEZ J. and CARDONA M., Temperature dependence of the first order Raman scattering by phonons in Si, Ge and a-Sn: anharmonic effects, Phys. Rev. B, 29 (1984), 2051-2059.
    • (1984) Phys. Rev. B , vol.29 , pp. 2051-2059
    • Menendez, J.1    Cardona, M.2
  • 67
    • 0039388026 scopus 로고
    • Deterministic simulations of the Boltz-mann transport equation of semiconductors
    • NICLOT B., DEGOND P. and POUPAUD F., Deterministic simulations of the Boltz-mann transport equation of semiconductors, J. Comput. Phys., 78 (1988), 313-349.
    • (1988) J. Comput. Phys. , vol.78 , pp. 313-349
    • Niclot, B.1    Degond, P.2    Poupaud, F.3
  • 68
    • 20744436919 scopus 로고
    • Microwave measurement of electron drift velocity in Indium Phosphide for electric fields up to 50 kV/cm
    • NIELSEN L. D., Microwave measurement of electron drift velocity in Indium Phosphide for electric fields up to 50 kV/cm, Phys. Lett. A, 38 (1972), 221-222.
    • (1972) Phys. Lett. A , vol.38 , pp. 221-222
    • Nielsen, L.D.1
  • 69
    • 4243272180 scopus 로고
    • Mobility, noise temperature and diffusivity of hot holes in germanium
    • NOUGIER J. P. and ROLLAND M., Mobility, noise temperature and diffusivity of hot holes in germanium, Phys. Rev. B, 8 (1973), 5728-5737.
    • (1973) Phys. Rev. B , vol.8 , pp. 5728-5737
    • Nougier, J.P.1    Rolland, M.2
  • 71
    • 0000663075 scopus 로고
    • Theory of optical-phonon deformation potentials in tetra-hedral semiconductors
    • POTZ W. and VOGL P., Theory of optical-phonon deformation potentials in tetra-hedral semiconductors, Phys. Rev. B, 24 (1981), 2025-2037.
    • (1981) Phys. Rev. B , vol.24 , pp. 2025-2037
    • Potz, W.1    Vogl, P.2
  • 72
    • 0004999024 scopus 로고
    • Two-dimensional electron transport in semiconductor layers. I: Phonon scattering
    • PRICE P. J., Two-dimensional electron transport in semiconductor layers. I: phonon scattering, Ann. Phys., 133 (1981), 217-239.
    • (1981) Ann. Phys. , vol.133 , pp. 217-239
    • Price, P.J.1
  • 73
    • 0037322119 scopus 로고    scopus 로고
    • Monte Carlo simulation of hot-phonon and degeneracy effects in the AlGaN/GaN two-dimensional electron gas channel
    • RAMONAS M., MATULIONIS A. and ROTA L., Monte Carlo simulation of hot-phonon and degeneracy effects in the AlGaN/GaN two-dimensional electron gas channel, Semicond. Sci. Technol, 18 (2003), 118-123.
    • (2003) Semicond. Sci. Technol , vol.18 , pp. 118-123
    • Ramonas, M.1    Matulionis, A.2    Rota, L.3
  • 76
    • 0642361958 scopus 로고
    • Hot electrons in low-dimensional structures
    • RIDLEY B. K., Hot electrons in low-dimensional structures, Rep. Prop. Phys., 54 (1991), 169-256.
    • (1991) Rep. Prop. Phys. , vol.54 , pp. 169-256
    • Ridley, B.K.1
  • 77
    • 0000186982 scopus 로고    scopus 로고
    • Mobility of electrons in bulk GaN and AlGai-N/GaN heterostructures
    • RIDLEY B. K., FOUTZ B. E. and EASTMAN L. F., Mobility of electrons in bulk GaN and AlGai-N/GaN heterostructures, Phys. Rev. B, 61 (2000), 16862-16869.
    • (2000) Phys. Rev. B , vol.61 , pp. 16862-16869
    • Ridley, B.K.1    Foutz, B.E.2    Eastman, L.F.3
  • 78
    • 85011527433 scopus 로고    scopus 로고
    • Computational methods for semiclassical and quantum transport in semiconductor devices
    • RINGHOFER C, Computational methods for semiclassical and quantum transport in semiconductor devices, Acta Num., 3 (1997), 485-521.
    • (1997) Acta Num. , vol.3 , pp. 485-521
    • Ringhofer, C.1
  • 79
    • 0034449740 scopus 로고    scopus 로고
    • Space-time discretization methods for series expansion solutions of the Boltzmann equation for semiconductors
    • RINGHOFER C, Space-time discretization methods for series expansion solutions of the Boltzmann equation for semiconductors, SIAM J. Num. Anal, 38 (2000), 442-465.
    • (2000) SIAM J. Num. Anal , vol.38 , pp. 442-465
    • Ringhofer, C.1
  • 80
    • 0035382405 scopus 로고    scopus 로고
    • Moment methods for the semiconductor Boltzmann equation in bounded position domains
    • RINGHOFER C. SCHMEISER C. and ZWIRCHMAYER A., Moment methods for the semiconductor Boltzmann equation in bounded position domains, J. Num. Anal., 39 (2001), 1078-1095.
    • (2001) J. Num. Anal. , vol.39 , pp. 1078-1095
    • Ringhofer, C.C.1    Zwirchmayer, A.2
  • 81
    • 0036495961 scopus 로고    scopus 로고
    • Generalized kinetic theory of electrons and phonons
    • ROSSANI A., Generalized kinetic theory of electrons and phonons, Physica A, 305 (2002), 323-329.
    • (2002) Physica A , vol.305 , pp. 323-329
    • Rossani, A.1
  • 82
    • 0033870918 scopus 로고    scopus 로고
    • A generalized quasi-classical Boltzmann equation
    • ROSSANI A. and KANIADAKIS G., A generalized quasi-classical Boltzmann equation, Physica A, 277 (2000), 349-358.
    • (2000) Physica A , vol.277 , pp. 349-358
    • Rossani, A.1    Kaniadakis, G.2
  • 83
    • 0015346006 scopus 로고
    • Electron Dynamics in short channel field-effect transistors
    • ED-19
    • RuCH J., Electron Dynamics in short channel field-effect transistors, IEEE Trans. Electron Devices, ED-19 (1972), 652-654.
    • (1972) IEEE Trans. Electron Devices , pp. 652-654
    • Ruch, J.1
  • 84
    • 45449125925 scopus 로고
    • Efficient implementation of essentially non-oscillatory shock capturing schemes
    • SHU C.-W. and OSHER S., Efficient implementation of essentially non-oscillatory shock capturing schemes, J. Comp. Phys., 77 (1988), 439-471.
    • (1988) J. Comp. Phys. , vol.77 , pp. 439-471
    • Shu, C.-W.1    Osher, S.2
  • 85
    • 33747239790 scopus 로고
    • Influence of non-uniform field distribution in the channel on the frequency performance of GaAs FETs
    • SHUR M. S., Influence of non-uniform field distribution in the channel on the frequency performance of GaAs FETs, Electron. Lett., 12 (1976), 615-616.
    • (1976) Electron. Lett. , vol.12 , pp. 615-616
    • Shur, M.S.1
  • 86
    • 0038964787 scopus 로고
    • High-field transport of holes in silicon
    • SMITH P. M., FREY J. and CHATTERJEE P., High-field transport of holes in silicon, Appi. Phys. Lett, 39 (1981), 332-333.
    • (1981) Appi. Phys. Lett , vol.39 , pp. 332-333
    • Smith, P.M.1    Frey, J.2    Chatterjee, P.3
  • 91
    • 0001108499 scopus 로고
    • Numerical solution of coupled steady state hot-phonon-hot-electron Boltzmann equations in InP
    • VAISSIERE J. C, NOUGIER J. P., FADEL M., HLOU L. and KOCEVAR P., Numerical solution of coupled steady state hot-phonon-hot-electron Boltzmann equations in InP, Phys. Rev. B, 46 (1992), 13082-13099.
    • (1992) Phys. Rev. B , vol.46 , pp. 13082-13099
    • Vaissiere, J.C.1    Nougier, J.P.2    Fadel, M.3    Hlou, L.4    Kocevar, P.5
  • 93
    • 51249167887 scopus 로고
    • A deterministic approach to the solution of the BTE in semiconductors
    • VENTURA D., GNUDI A. and BACCARANI G., A deterministic approach to the solution of the BTE in semiconductors, Rivista del Nuovo Cimento, 18 (1995), 1-33.
    • (1995) Rivista del Nuovo Cimento , vol.18 , pp. 1-33
    • Ventura, D.1    Gnudi, A.2    Baccarani, G.3
  • 98
    • 0642298764 scopus 로고
    • Conduction band minima of InP: Ordering and absolute energies
    • ZOLLNER S., SCHMID U., CHRISTENSEN N. E. and CARDONA M., Conduction band minima of InP: Ordering and absolute energies, Appi. Phys. Lett., 57 (1990), 2339-2341.
    • (1990) Appi. Phys. Lett. , vol.57 , pp. 2339-2341
    • Zollner, S.1    Schmid, U.2    Christensen, N.E.3    Cardona, M.4


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