A multicell matrix solution to the Boltzmann equation applied to the anisotropic electron transport in silicon

Journal of Physics A: Mathematical and General

Volumn 36, Issue 33, 2003, Pages 8759-8774

  Ertler, C ^a   Schurrer F ^a  

^a GRAZ UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0242361061     PISSN: 03054470     EISSN: None     Source Type: Journal    
DOI: 10.1088/0305-4470/36/33/304     Document Type: Article

References (25)

1. Duderstadt J and Martin W 1979 Transport Theory (New York: Wiley)
2. Caraffini G L, Ganapol B D and Spiga G 1995 A multigroup approach to the non-linear extended Boltzmann equation Nuovo Cimenta D 17 129
3. Rossani A and Spiga G 1998 Kinetic theory with inelastic interactions Transp. Theory. Stat. Phys. 27 261
4. Koller W 2000 Semi-continuous and multigroup models in extended kinetic theory PhD Thesis Technical University, Graz 135
5. Ertler C and Schurrer F 2002 A multigroup spline approximation in extended kinetic theory J. Phys. A: Math. Gen. 35 8673
6. Bell G and Glasstone S 1970 Nuclear Reactor Theory (New York: Van Nostrand Reinhold)
7. Lapidus L and Finder G F 1982 Numerical Solution of Partial Differential Equations in Science and Engineering (New York: Wiley)
8. Majorana A 1991 Space homogeneous solutions of the Boltzmann equation describing electron phonon interactions in semiconductors Transp. Theory. Stat. Phys. 20 261
9. Kunikiyo T, Takenaka M, Kamakura Y, Yamaji M, Mizuno H, Morifuji M, Taniguchi K and Hamaguchi C 1994 A Monte Carlo simulation of anisotropic electron transport in silicon including full band structure and anisotropic impact-ionization model J. Appl. Phys. 75 297
10. Fischetti M V 1991 Monte Carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blende structures. Part I: homogeneous transport IEEE Trans. Electron. Devices 38 634
11. Budd H 1966 Proc. Int. Conf. on the Physics of Semiconductors (Kyoto) J. Phys. Soc. Japan Suppl. 21 420
12. Nougier J P and Rolland M 1973 Mobility, noise temperature and diffusivity of hot holes in germanium Phys. Rev. B 8 5728
13. Alam M A, Stettler M S and Lundstrom M S 1993 Formulation of the Boltzmann equation in terms of scattering matrices Solid-State Electron. 36 263
14. Aubert J P, Vaissiere J C and Nougier J P 1984 Matrix determination of the stationary solution of the Boltzmann equation for hot carriers in semiconductors J. Appl. Phys. 56 1128
15. Fatemi E and Odeh F 1993 Upwind finite difference solution of Boltzmann equation applied to electron transport in semiconductor devices J. Comput. Phys. 108 209
16. Majorana A and Pidatella R M 2001 A finite difference scheme solving the Boltzmann-Poisson system for semiconductor devices J. Comput. Phys. 174 649
17. Jacoboni C and Reggiani L 1983 The Monte Carlo method for the solution of charge transport in semiconductors with application to covalent materials Rev. Mod. Phys. 55 645
18. Herring C and Vogt E 1956 Transport and deformation-potential theory for many-valley semiconductors with anisotropic scattering Phys. Rev. 101 944
19. Streitwolf H W 1970 Phys. Status Solidi B 37 K47
20. Lax M and Birman J L 1972 Phys. Status Solidi B 49 K153
21. Fischetti M V and Laux S E 1988 Monte Carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects Phys. Rev. B 38 9721
22. Canali C, Jacoboni C, Nava F, Ottaviani G and Alberigi-Quaranta A 1975 Electron drift velocity in silicon Phys. Rev. B 12 2265
23. Conwell E M 1967 High Field Transport in Semiconductors (Oxford: Academic)
24. Holm-Kennedy J W and Champlin K S 1970 Appl. Phys. Lett. 16 46
25. Vorobyov L E, Stafeev V I and Ushakov A U 1973 Phys. Tech. Semicond. 7 919