Local electronic structures of GaMnAs observed by cross-sectional scanning tunneling microscopy

Applied Physics Letters

Volumn 81, Issue 15, 2002, Pages 2800-2802

  Tsuruoka, T ^a   Tachikawa, N ^a   Ushioda, S ^a   Matsukura, F ^a   Takamura, K ^a   Ohno, H ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANTISITES; AVERAGE SIZE; CONDUCTANCE PEAKS; CONDUCTANCE SPECTRA; CROSS-SECTIONAL SCANNING TUNNELING MICROSCOPIES; HOLE STATE; IONIZATION LEVEL; LOCAL ELECTRONIC STRUCTURES; STM IMAGES; VALENCE BAND EDGES;

ELECTRON TUNNELING; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; ENERGY GAP; MANGANESE; SCANNING TUNNELING MICROSCOPY;

GALLIUM ALLOYS;

EID: 79956039534     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1512953     Document Type: Article

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