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Physical Review B - Condensed Matter and Materials Physics

Volumn 64, Issue 3, 2001, Pages 0352071-0352076

Electronic and magnetic properties of Ga1-xMnxAs: Role of Mn defect bands

(4) Zhao, Yu Jun a Geng, W T a Park, K T a,b Freeman, A J a

a NORTHWESTERN UNIVERSITY (United States)

b Kookmin University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC DERIVATIVE; FERROMAGNETIC MATERIAL; GALLIUM; MANGANESE DERIVATIVE;

ARTICLE; ATOM; CALCULATION; CIRCULAR DICHROISM; CONDUCTANCE; ELECTRONICS; MAGNETISM; MATERIALS; MATERIALS TESTING; MATHEMATICAL ANALYSIS; SEMICONDUCTOR;

EID: 0034905160 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (66)

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