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Volumn 65, Issue 8, 2002, Pages 1-12

First-principles study of migration, restructuring, and dissociation energies of oxygen complexes in silicon

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Indexed keywords


EID: 85038307460     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.65.085205     Document Type: Article
Times cited : (10)

References (57)
  • 1
    • 0004019068 scopus 로고    scopus 로고
    • edited by R. Jones (Kluwer Academic Publishers, Dordrecht
    • Early Stages of Oxygen Precipitation in Silicon, edited by R. Jones (Kluwer Academic Publishers, Dordrecht, 1996).
    • (1996) Early Stages of Oxygen Precipitation in Silicon
  • 3
    • 0001029984 scopus 로고
    • Oxygen, Carbon, Hydrogen, and Nitrogen in Crystalline Silicon
    • edited by J. C. Mikkelson, Jr., S. J. Pearton, J. W. Corbett, and S. J. Pennycook, Materials Research Society, Pittsburgh
    • J.C. Mikkelsen, in Oxygen, Carbon, Hydrogen, and Nitrogen in Crystalline Silicon, edited by J. C. Mikkelson, Jr., S. J. Pearton, J. W. Corbett, and S. J. Pennycook, Mater. Res. Soc. Symp. Proc. 59 (Materials Research Society, Pittsburgh, 1986), p. 19.
    • (1986) Mater. Res. Soc. Symp. Proc. , vol.59 , pp. 19
    • Mikkelsen, J.C.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.