메뉴 건너뛰기




Volumn 81, Issue 3, 1997, Pages 1109-1115

Stress-induced alignment of NL8 thermal donors in silicon: Energetics and kinetics

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0001156458     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363854     Document Type: Article
Times cited : (19)

References (39)
  • 3
    • 0004019068 scopus 로고    scopus 로고
    • Kluwer Academic, Dordrecht, NATO book series
    • The present state of understanding for the thermal donors was a major topic of discussion at a recent NATO workshop held in Exeter, England, March 26-29, 1996. The proceedings are to be published in Early Stages of Oxygen Precipitation in Silicon, edited by R. Jones (Kluwer Academic, Dordrecht, 1996), NATO book series.
    • (1996) Early Stages of Oxygen Precipitation in Silicon
    • Jones, R.1
  • 7
    • 0020498878 scopus 로고
    • edited by S. Mahajan and J. W. Corbett North Holland, Amsterdam, MRS
    • R. Oeder and P. Wagner, in Defects in Semiconductors II, edited by S. Mahajan and J. W. Corbett (North Holland, Amsterdam, 1983), MRS, Vol. 14, p. 171.
    • (1983) Defects in Semiconductors II , vol.14 , pp. 171
    • Oeder, R.1    Wagner, P.2
  • 9
    • 84975335099 scopus 로고
    • edited by H. R. Huff, R. J. Kriegler, and Y. Takeishi Electrochemical Society, Pennington, NJ
    • H. F. Schaake, S. C. Barber, and R. F. Pinizotto, in Semiconductoe Silicon 1981, edited by H. R. Huff, R. J. Kriegler, and Y. Takeishi (Electrochemical Society, Pennington, NJ, 1981), p. 273.
    • (1981) Semiconductoe Silicon 1981 , pp. 273
    • Schaake, H.F.1    Barber, S.C.2    Pinizotto, R.F.3
  • 19
    • 0028589698 scopus 로고
    • N. Meilwes, J. -M. Spaeth, V. V. Emtsev, G. A. Oganeysan, W. Götz, and G. Pensl, Mater. Sci. Forum 143-147, 141 (1994). This study concluded that the NL10 electical level is deeper than 65 meV below the conduction band, which appears to rule out the shallow excitation spectrum reported by Ref. 20 and cited by Ref. 18 as belonging to NL10.
    • (1994) Mater. Sci. Forum , vol.143-147 , pp. 141
    • Meilwes, N.1    Spaeth, J.M.2    Emtsev, V.V.3    Oganeysan, G.A.4    Götz, W.5    Pensl, G.6
  • 21
    • 3943102548 scopus 로고
    • edited by J. C. Mikkelsen, J. W. Corbett, and S. J. Pennycook Materials Research Society, Pittsburgh, PA
    • J. A. Griffin, H. Navarro, and L. Genzel, in Oxygen, Carbon, Hydrogen, and Nitrogen in Silicon, edited by J. C. Mikkelsen, J. W. Corbett, and S. J. Pennycook (Materials Research Society, Pittsburgh, PA, 1986), Vol. 59, p. 139.
    • (1986) Oxygen, Carbon, Hydrogen, and Nitrogen in Silicon , vol.59 , pp. 139
    • Griffin, J.A.1    Navarro, H.2    Genzel, L.3
  • 27
    • 0004223026 scopus 로고    scopus 로고
    • edited by F. Shimura
    • R. C. Newman and R. Jones, in Oxygen in Silicon, edited by F. Shimura, Vol. 42 of Semiconductors and Semimetals, edited by R. K. Willardson, A. C. Beer, and E. R. Weber (Academic, San Diego, 1994), Chap. 8.
    • Oxygen in Silicon
    • Newman, R.C.1    Jones, R.2
  • 28
  • 34
    • 0000571274 scopus 로고
    • A. A. Kaplyanskii, Opt. Spektrosk. 16, 606 (1964) [Opt. Spectrosc. 16, 329 (1964)].
    • (1964) Opt. Spectrosc. , vol.16 , pp. 329
  • 36
    • 0004223026 scopus 로고    scopus 로고
    • edited by F. Shimura
    • B. Pajot, in Oxygen in Silicon, edited by F. Shimura, Vol. 42 of Semiconductors and Semimetals, edited by R. K. Willardson, A. C. Beer, and E. R. Weber (Academic, New York, 1994), Chap. 6.
    • Oxygen in Silicon
    • Pajot, B.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.