High thermal stability quasi-free-standing bilayer graphene formed on 4H-SiC(0001) via platinum intercalation

Carbon

Volumn 79, Issue 1, 2014, Pages 631-635

  Xia, Chao ^a   Johansson, Leif I ^a   Niu, Yuran ^b   Zakharov, Alexei A ^b   Janzén, Erik ^a   Virojanadara, Chariya ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b LUND UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BUFFER LAYERS; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; LOW ENERGY ELECTRON DIFFRACTION; PHOTOELECTRON SPECTROSCOPY; PHOTOELECTRONS; PHOTONS; PLATINUM; SILICIDES; SILICON; SILICON CARBIDE;

ANGLE RESOLVED PHOTOELECTRON SPECTROSCOPY; BILAYER GRAPHENE; GRAPHENE LAYERS; HIGH THERMAL STABILITY; LEED PATTERNS; PLATINUM SILICIDES; PT DEPOSITION; SIC SUBSTRATES;

GRAPHENE;

EID: 85027932128     PISSN: 00086223     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.carbon.2014.08.027     Document Type: Article

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