Valence band offset of [formula omitted] heterojunction measured by x-ray photoelectron spectroscopy

Applied Physics Letters

Volumn 93, Issue 7, 2008, Pages 1409-

  Zhang, B L ^a   Cai, F F ^a   Sun, G S ^a   Fan, H B ^a   Zhang, P F ^a   Wei, H Y ^a   Liu, X L ^a   Yang, S Y ^a   Zhu, Q S ^a   Wang, Z G ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION BANDS; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; ELECTRON SPECTROSCOPY; HEAT CONDUCTION; HETEROJUNCTIONS; MOLECULAR ORBITALS; MOLECULAR SPECTROSCOPY; OPTOELECTRONIC DEVICES; PHOTOELECTRICITY; PHOTOELECTRON SPECTROSCOPY; PHOTOIONIZATION; PHOTONS; SILICON CARBIDE; SPECTRUM ANALYSIS;

BAND ALIGNMENTS; CONDUCTION BAND OFFSET; CONDUCTION BAND OFFSETS; HETERO JUNCTION; VALENCE BAND OFFSET;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 85024789680     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2975168     Document Type: Article

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