Realization of nanostructured N-doped p-type Bi2O3 thin films

Materials Letters

Volumn 193, Issue , 2017, Pages 228-231

  Wang, Ying ^a   Jiang, Liangxing ^a   Chen, Jianyu ^a   Liu, Fangyang ^a   Lai, Yanqing ^a  

^a CENTRAL SOUTH UNIVERSITY   (China)

Author keywords

Nanocrystalline materials; Optical materials and properties; Porous materials

Indexed keywords

CARRIER CONCENTRATION; DEPOSITION; ELECTROCHEMISTRY; HALL MOBILITY; MATERIALS PROPERTIES; NANOCRYSTALLINE MATERIALS; NANOCRYSTALS; POROUS MATERIALS; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; THIN FILMS;

CHEMICAL-BATH DEPOSITION; LIGHT INTENSITY; OPTICAL MATERIALS AND PROPERTIES; P TYPE CONDUCTIVITY; PHOTOCURRENT DENSITY; PHOTOELECTROCHEMICAL APPLICATIONS; PHOTOELECTROCHEMICALS; THERMAL TREATMENT PROCESS;

DOPING (ADDITIVES);

EID: 85011886776     PISSN: 0167577X     EISSN: 18734979     Source Type: Journal    
DOI: 10.1016/j.matlet.2017.01.115     Document Type: Article

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