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Volumn 91, Issue 11, 2007, Pages
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Via-hole-based vertical GaN light emitting diodes
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRIC POTENTIAL;
GALLIUM NITRIDE;
HOLE CONCENTRATION;
RELIABILITY THEORY;
SUBSTRATES;
OPERATING VOLTAGE;
OPERATION VOLTAGE;
OPTICAL POWER;
SAPPHIRE SUBSTRATES;
LIGHT EMITTING DIODES;
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EID: 34548701093
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.2785110 Document Type: Article |
Times cited : (22)
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References (6)
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