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0029485053
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0031710316
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95 GHz fT self-aligned selective epitaxial SiGe HBT with SMI electrode
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K. Washio, E. Ohue, K. Oda, M. Tanabe, H. Shimamoto, and T. Onai, “95 GHz fT self-aligned selective epitaxial SiGe HBT with SMI electrode,” in Dig. Tech. IEEE Int. Solid-State Circuits Conf., 1998, pp. 312-313.
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40 Gb/s analog IC chipset for optical receiver using SiGe HBT's
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T. Masuda, K. Ohhata, E. Ohue, K. Oda, M. Tanabe, H. Shimamoto, T. Onai, and K. Washio, “40 Gb/s analog IC chipset for optical receiver using SiGe HBT's,” in Dig. Tech. IEEE Int. Solid-State Circuits Conf., 1998, pp. 314-315.
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4
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0032307705
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Design aspects of 32.7-GHz bandwidth AGC amplifier IC with wide dynamic-range implemented in SiGe HBT
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0032480181
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SiGe retiming high-gain power MUX for directly driving an EAM up to 50 Gb/s
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0031382437
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InP/InGaAs HBT IC's for 40 Gbit/s optical transmission systems
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H. Suzuki, K. Watanabe, K. Ishikawa, H. Masuda, K. Ouchi, T. Tanoue, and R. Takeyari, “InP/InGaAs HBT IC's for 40 Gbit/s optical transmission systems,” in Tech. Dig. IEEE GaAs IC Symp., 1997, pp. 215-218.
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3242859377
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44 Gbit/s GaAs MESFET selector IC
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0001477057
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An 80-Gbit/s multiplexer IC using InAlAs/InGaAs/InP HEMT's
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0030270562
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A packaged broad-band monolithic variable gain amplifier implemented in AlGaAs/GaAs HBT technology
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R. Yu, S. Beccue, P. J. Zampardi, R. L. Pierson, A. Petersen, K. C. Wang, and J. E. Bowers, “A packaged broad-band monolithic variable gain amplifier implemented in AlGaAs/GaAs HBT technology,” IEEE J. Solid-State Circuits, vol. 31, no. 10, pp. 1380-1387.
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Low-noise, high-gain Sibipolar preamplifiers for 10Gb/s optical links-Design and realization
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0024882853
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0028468458
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13 Gb/s Si-bipolar AGC amplifier IC with high gain and wide dynamic range for optical-fiber receivers
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0024734002
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9 GHz bandwidth, 8-20 dB controllable-gain monolithic amplifier using AlGaAs/GaAs HBT technology
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