A packaged broad-band monolithic variable gain amplifier implemented in AlGaAs/GaAs HBT technology

IEEE Journal of Solid-State Circuits

Volumn 31, Issue 10, 1996, Pages 1380-1386

  Yu, Ruai ^b,e,f,g   Beccue, Steve ^b,c,h,i   Zampardi, P J ^a,b,h,j,k,l   Pierson, Richard L ^b,m,n   Petersen, Anders ^d,f,o   Wang, K C ^a,b   Bowers, John E ^a,d  

^a IEEE

^b ROCKWELL SCIENCE CENTER   (United States)

^c Practical Sciences Inc   (United States)

^d University of California   (United States)

^e SAN FRANCISCO STATE UNIVERSITY   (United States)

^f UNIVERSITY OF CALIFORNIA   (United States)

^g Ampex Corporation   (United States)

^h CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

ⁱ Practical Sciences Inc

^j STEVENS INSTITUTE OF TECHNOLOGY   (United States)

^k UNIVERSITY OF CALIFORNIA   (United States)

^l High Speed Circuits Department

^m High Speed Circuits Department

ⁿ Science Center   (Denmark)

^o TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

more..

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC LOSSES; FABRICATION; FIBER OPTICS; HETEROJUNCTION BIPOLAR TRANSISTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL COMMUNICATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; TELECOMMUNICATION LINKS; TIME DIVISION MULTIPLEXING;

BROADBAND MONOLITHIC VARIABLE GAIN AMPLIFIER; FIBER OPTIC TIME DIVISION MULTIPLEXING; OPTICAL LITHOGRAPHY; ROCKWELL SELF ALIGNED DIELECTRIC ASSISTED PLANARIZATION PROCESS;

BROADBAND AMPLIFIERS;

EID: 0030270562     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.540044     Document Type: Article

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