13 Gb/s Si-Bipolar AGC Amplifier IC with High Gain and Wide Dynamic Range for Optical-Fiber Receivers

IEEE Journal of Solid-State Circuits

Volumn 29, Issue 7, 1994, Pages 815-822

  Mollor M ^a   Wernz, H ^b  

^a RUHR UNIVERSITY BOCHUM   (Germany)

^b ANT Nachrichtentechnik   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR INTEGRATED CIRCUITS; BUFFER CIRCUITS; FIBER OPTICS; GAIN CONTROL; IMPEDANCE MATCHING (ELECTRIC); INTEGRATED CIRCUIT LAYOUT; MICROPROCESSOR CHIPS; NETWORK COMPONENTS; OPTICAL FIBERS; OPTICAL LINKS; SIGNAL RECEIVERS; SILICON ON INSULATOR TECHNOLOGY;

DIFFERENTIAL MODE; LINEAR AUTOMATIC GAIN CONTROL AMPLIFIERS; OPTICAL FIBER LINKS; SINGLE ENDED MODE;

AMPLIFIERS (ELECTRONIC);

EID: 0028468458     PISSN: 00189200     EISSN: 1558173X     Source Type: Journal    
DOI: 10.1109/4.303710     Document Type: Article

References (21)

1. H.-M. Rein, “Multi-gigabit-per-second silicon bipolar ICs for future optical-fiber transmission systems,” IEEE J. Solid-State Circuits, vol. 23, pp. 664-675, June 1988.
2. R. Reimann and H.-M. Rein, “Bipolar high-gain limiting amplifier IC for optical-fiber receivers operating up to 4 Gbit/s,” IEEE J. Solid-State Circuits, vol. 22, pp. 504-510, Aug. 1987.
3. H.-M. Rein, J. Hauenschild, M. Moller, W. McFarland, D. Pettengill and J. Doernberg, “30 Gbit/s Si multiplexer and demultiplexer ICs in silicon bipolar technologies,” Electron. Lett., vol. 28, pp. 97-99, Jan. 1992.
4. J. Hauenschild, A. Felder, M. Kerber, H.-M. Rein and L. Schmidt, “A 22 Gb/s decision circuit and a 32 Gb/s regenerating demultiplexer IC fabricated in silicon bipolar technology,” in Proc. IEEE 1992 BCTM, Minneapolis, MN, Oct. 1992, pp. 151-154.
5. A. Felder, J. Hauenschild, M. Kerber and H.-M. Rein, “Low power (4 mW, 10 GHz) and high speed (160 mW, 19 GHz) silicon bipolar static frequency dividers,” in Proc. IEEE 1992 BCTM, Minneapolis, MN, Oct. 1992, pp. 159-162.
6. M. Neuhäuser, H.-M. Rein, H. Wernz and A. Felder, “A 13 Gbit/s Si bipolar preamplifier for optical front ends,” Electron. Lett., vol. 29, pp. 492-493, March 1993.
7. H.-M. Rein, E. Bertagnolli, A. Felder and L. Schmidt, “A silicon bipolar laser and line driver IC with symmetrical output pulse shape operating up to 12 Gbit/s,” Electron. Lett., vol. 28, pp. 1295-1296, July 1992.
8. H.-M. Rein, R. Schmid, P. Weger, T. Smith, T. Herzog, and R. Lachner, “A versatile Si-bipolar driver circuit with high output voltage swing for external and direct laser modulation in 10 Gb/s optical fiber links,” accepted for publication in IEEE J. Solid-State Circuits.
9. RACE—Project 1051 “Multigigabit transmission in the IBCN subscriber loop,” [final report Nov. 1993].
10. V. Dela Torre, J. Foerstner, B. Lojek, K. Sakamoto, S. L. Sundaram, N. Tracht, B. Vasquez and P. Zdebel, “MOSAIC V—a very high performance bipolar technology,” in Proc. IEEE 1991 BCTM, Minneapolis, MN, Sept. 1991, pp. 21-24.
11. T. Suzaki., M. Soda, T. Morikawa, H. Tezuka, C. Ogawa, S. Fujita, H. Takemura and T. Tashiro, “Si bipolar chip set for 10 Gb/s optical receiver,” IEEE J. Solid-State Circuits, vol. 27, pp. 1781-1786, Dec. 1992.
12. J. Akagi, Y. Kuriyama, K. Morizuka, A. Masayuki, K. Tsuda, M. Obara, H. Yamakawa and I. Hiroyuki, “AlGaAs/GaAs HBT receiver ICs for a 10 Gb/s optical communication system,” GaAs IC Symp. Dig., pp. 45-48, Oct. 1990.
13. N. Ishihara, E. Sano, Y. Imai, H. Kikuchi and Y. Yamane, “A design technique for a high-gain, 10-GHz class-bandwidth GaAs MESFET amplifier IC module,” IEEE J. Solid-State Circuits, vol. 27, pp. 554-562, April 1992.
14. R. Reimann and H.-M. Rein, “A single-chip bipolar AGC amplifier with large dynamic range for optical-fiber receivers operating up to 3 Gbit/s,” IEEE J. Solid-State Circuits, vol. 24, pp. 1744-1748, Dec. 1989.
15. E. M. Cherry and D. E. Hooper, “The design of wide-band transistor feedback amplifier,” in Proc. Inst. Elec. Eng., vol. 110, Feb. 1963, pp. 375-389.
16. P. R. Gray and R. G. Meyer, Analysis and Design of Analog Integrated Circuits, New York: Wiley, 3rd ed., 1993.
17. R. Reimann, “Monolithic integrated wide-band amplifiers in silicon bipolar technology for optical transmission systems in the Gbit/s range" (in German), Ph.D. thesis, Ruhr-University Bochum, Germany, 1990.
18. J. Hauenschild and H.-M. Rein, “Influence of transmission-line interconnections between gigabit-per-second IC’s on time jitter and instabilities,” IEEE J. Solid-State Circuits, vol. 25, pp. 763-766, June 1990.
19. A. Koldehoff, M. Schröter and H.-M. Rein, “A compact bipolar transistor model for very-high-frequency applications with special regard to narrow emitter stripes and high current densities,” Solid-State Electron., vol. 36, pp. 1038-1048, July 1993.
20. M. Bußmann, U. Langmann, B. Hillery and W. W. Brown, “A 12.5 Gb/s Si bipolar IC for PRBS generation and bit error detection up to 25 Gb/s,” ISSCC’93, San Francisco, CA, Dig. Tech. Papers, pp. 152-153, 280, Feb. 1993.
21. M. Neuhäuser, H.-M. Rein and H. Wernz, “Design and realization of low-noise, high-gain Si-bipolar transimpedance preamplifiers for 10 Gb/s optical-fiber links,” IEEE 1994 BCTM, Minneapolis, MN, Oct. 1994.