All-electrical detection of spin Hall effect in semiconductors

Physica Status Solidi (B) Basic Research

Volumn 251, Issue 9, 2014, Pages 1725-1735

  Ehlert, Markus ^a   Song, Cheng ^a,b   Ciorga, Mariusz ^a   Hupfauer, Thomas ^a   Shiogai, Junichi ^a,c   Utz, Martin ^a   Schuh, Dieter ^a   Bougeard, Dominique ^a   Weiss, Dieter ^a  

^a UNIVERSITY OF REGENSBURG   (Germany)

^b TSINGHUA UNIVERSITY   (China)

^c TOHOKU UNIVERSITY   (Japan)

Author keywords

Gallium arsenide; Nonlocal resistance; Spin Hall effect; Spin injection

Indexed keywords

CRYSTAL SYMMETRY; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; INVERSE PROBLEMS;

DEVICE GEOMETRIES; ELECTRICAL DETECTION; EXPERIMENTAL APPROACHES; MEASUREMENT GEOMETRY; NONLOCAL; SPIN INJECTION;

SPIN HALL EFFECT;

EID: 84995349025     PISSN: 03701972     EISSN: 15213951     Source Type: Journal    
DOI: 10.1002/pssb.201350206     Document Type: Article

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