Design of power FETs based on coupled electro-thermal-electromagnetic modeling

IEEE MTT-S International Microwave Symposium Digest

Volumn 2005, Issue , 2005, Pages 461-464

  Denis, David ^a   Snowden, Christopher M ^b   Hunter, Ian C ^a  

^a UNIVERSITY OF LEEDS   (United Kingdom)

^b Filtronic Compound Semiconductor Ltd   (United Kingdom)

Author keywords

Electromagnetic and thermal simulations; Physical; Power transistor model

Indexed keywords

COMPUTER AIDED DESIGN; ELECTROMAGNETIC WAVES; MICROWAVE MEASUREMENT; MICROWAVES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; POWER AMPLIFIERS; THERMOANALYSIS;

DISCRETE TRANSISTORS; ELECTROMAGNETIC SIMULATIONS; PHYSICAL SIMULATIONS; POWER TRANSISTOR MODELS; THERMAL SIMULATIONS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33749242106     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2005.1516629     Document Type: Conference Paper

References (9)

1. D. Denis, I. Hunter, C. Snowden, "Comprehensive Characterization and Modelling of Micro-wave Power HEMTs for Large-Signal Power Amplifier Design", GaAs Symposium, Oct. 2004
2. E. Larique, S. Mons, D. Baillargeat, S. Verdeyme, M. Aubourg, R. Quéré, P. Guillon, C. Zanchi, J. Sombrin, "Linear and Nonlinear FET Modeling Applying an Electromagnetic and Electrical Hybrid Soft-ware", IEEE Trans. Microwave Theory & Tech., vol. 47, no. 6, pp. 915-918, June 1999.
3. R. Drury and C.M. Snowden, "A Quasi-Two-Dimensional HEMT Model for Micro-wave CAD Applications", IEEE Transactions on Electron Devices, pp. 1026-1032, June 1995.
4. Snowden, C.M., "Characterization and Modelling of Microwave and Millimetre-Wave Large-Signal Device-Circuit Interaction Based on Electro-Thermal Physical Models", Proc. IEEE Int. Microwave Symposium, Denver, USA, pp. 155-158, June, 1997.
5. L. L. Liou, J. L. Ebel, and C. I. Huang, "Thermal effects on the characteristics of AlGaAs/GaAs heterojunction bipolar transistors using two-dimensional numerical simulation," IEEE Trans. Electron Devices, vol. 40, pp. 35-42, Jan. 1993.
6. G.-B. Gao, M.-Z. Whang, X Gui, and H. Morko, "Thermal design studies of high-power heterojunction bipolar transistors," IEEE Trans. Electron Devices, vol. 36, pp. 854-863, May 1989.
7. C.M. Snowden, "Large-Signal Microwave Characterization of AlGaAs/GaAs HBTs based on a Physics-Based Electro-Thermal Model", IEEE Trans. Microwave Theory & Tech., vol. 45, no. 1, pp. 58-71, January 1997.
8. R. Anholt, "Electrical and Thermal Characterization of MES-FETs, HEMTs and HBTs", 1994, ISBN 0-89006-749-X.
9. A. E. Parker, D. J. Skellern, "A Realistic Large-Signal MESFET Model for SPICE", IEEE Trans. Microwave Theory & Tech., vol. 45, no. 9, September 1997.