-
1
-
-
7444220645
-
Electric Field Effect in Atomically Thin Carbon Films
-
K. S. Novoselov Electric Field Effect in Atomically Thin Carbon Films Science 2004 306 5696 666 669
-
(2004)
Science
, vol.306
, Issue.5696
, pp. 666-669
-
-
Novoselov, K.S.1
-
3
-
-
67649225738
-
Graphene: Status and Prospects
-
A. K. Geim Graphene: Status and Prospects Science 2009 324 5934 1530 1534
-
(2009)
Science
, vol.324
, Issue.5934
, pp. 1530-1534
-
-
Geim, A.K.1
-
5
-
-
84866429144
-
Large excitonic effects in monolayers of molybdenum and tungsten dichalcogenides
-
A. Ramasubramaniam Large excitonic effects in monolayers of molybdenum and tungsten dichalcogenides Phys. Rev. B: Condens. Matter Mater. Phys. 2012 86 11 1 6
-
(2012)
Phys. Rev. B: Condens. Matter Mater. Phys.
, vol.86
, Issue.11
, pp. 1-6
-
-
Ramasubramaniam, A.1
-
7
-
-
84904707277
-
Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics
-
F. Xia H. Wang Y. Jia Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics Nat. Commun. 2014 5 4458
-
(2014)
Nat. Commun.
, vol.5
, pp. 4458
-
-
Xia, F.1
Wang, H.2
Jia, Y.3
-
8
-
-
84863670508
-
GaS and GaSe ultrathin layer transistors
-
D. J. Late B. Liu J. Luo A. Yan H. S. S. R. Matte M. Grayson C. N. R. Rao V. P. Dravid GaS and GaSe ultrathin layer transistors Adv. Mater. 2012 24 26 3549 3554
-
(2012)
Adv. Mater.
, vol.24
, Issue.26
, pp. 3549-3554
-
-
Late, D.J.1
Liu, B.2
Luo, J.3
Yan, A.4
Matte, H.S.S.R.5
Grayson, M.6
Rao, C.N.R.7
Dravid, V.P.8
-
9
-
-
84876950918
-
Tunable electronic and dielectric behavior of GaS and GaSe monolayers
-
Y. Ma Y. Dai M. Guo L. Yu B. Huang Tunable electronic and dielectric behavior of GaS and GaSe monolayers Phys. Chem. Chem. Phys. 2013 15 19 7098 7105
-
(2013)
Phys. Chem. Chem. Phys.
, vol.15
, Issue.19
, pp. 7098-7105
-
-
Ma, Y.1
Dai, Y.2
Guo, M.3
Yu, L.4
Huang, B.5
-
10
-
-
84939609327
-
Electronic and thermoelectric properties of van der Waals materials with ring-shaped valence bands
-
D. Wickramaratne F. Zahid R. K. Lake Electronic and thermoelectric properties of van der Waals materials with ring-shaped valence bands J. Appl. Phys. 2015 118 7 075101
-
(2015)
J. Appl. Phys.
, vol.118
, Issue.7
, pp. 075101
-
-
Wickramaratne, D.1
Zahid, F.2
Lake, R.K.3
-
12
-
-
84948426524
-
2: Two-Dimensional Semiconductor with Tunable In-Plane Anisotropy
-
2: Two-Dimensional Semiconductor with Tunable In-Plane Anisotropy ACS Nano 2015 9 11 11249 11257
-
(2015)
ACS Nano
, vol.9
, Issue.11
, pp. 11249-11257
-
-
Lin, Y.C.1
Komsa, H.P.2
Yeh, C.H.3
Björkman, T.4
Liang, Z.Y.5
Ho, C.H.6
Huang, Y.S.7
Chiu, P.W.8
Krasheninnikov, A.V.9
Suenaga, K.10
-
13
-
-
84904616293
-
High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus
-
J. Qiao X. Kong Z.-X. Hu F. Yang W. Ji High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus Nat. Commun. 2014 5 4475
-
(2014)
Nat. Commun.
, vol.5
, pp. 4475
-
-
Qiao, J.1
Kong, X.2
Hu, Z.-X.3
Yang, F.4
Ji, W.5
-
14
-
-
84898060562
-
Phosphorene: An unexplored 2D semiconductor with a high hole mobility
-
H. Liu A. T. Neal Z. Zhu Z. Luo X. Xu D. Tománek P. D. Ye Phosphorene: An unexplored 2D semiconductor with a high hole mobility ACS Nano 2014 8 4 4033 4041
-
(2014)
ACS Nano
, vol.8
, Issue.4
, pp. 4033-4041
-
-
Liu, H.1
Neal, A.T.2
Zhu, Z.3
Luo, Z.4
Xu, X.5
Tománek, D.6
Ye, P.D.7
-
15
-
-
84936970795
-
3 (M = Ti, Zr; X = S, Se, Te): A new platform for nano-electronics and optics
-
3 (M = Ti, Zr; X = S, Se, Te): a new platform for nano-electronics and optics Phys. Chem. Chem. Phys. 2015 17 28 18665 18669
-
(2015)
Phys. Chem. Chem. Phys.
, vol.17
, Issue.28
, pp. 18665-18669
-
-
Jin, Y.1
Li, X.2
Yang, J.3
-
20
-
-
84960154778
-
Titanium trisulfide (TiS 3): A 2D semiconductor with quasi-1D optical and electronic properties
-
J. O. Island R. Biele M. Barawi J. M. Clamagirand J. R. Ares C. Sánchez H. S. J. Van Der Zant I. J. Ferrer R. D. Agosta A. Castellanos-gomez Titanium trisulfide (TiS 3): a 2D semiconductor with quasi-1D optical and electronic properties Sci. Rep. 2016 6 22214
-
(2016)
Sci. Rep.
, vol.6
, pp. 22214
-
-
Island, J.O.1
Biele, R.2
Barawi, M.3
Clamagirand, J.M.4
Ares, J.R.5
Sánchez, C.6
Van Der Zant, H.S.J.7
Ferrer, I.J.8
Agosta, R.D.9
Castellanos-Gomez, A.10
-
21
-
-
84903727079
-
Layer-controlled band gap and anisotropic excitons in few-layer black phosphorus
-
V. Tran R. Soklaski Y. Liang L. Yang Layer-controlled band gap and anisotropic excitons in few-layer black phosphorus Phys. Rev. B: Condens. Matter 2014 89 23 235319
-
(2014)
Phys. Rev. B: Condens. Matter
, vol.89
, Issue.23
, pp. 235319
-
-
Tran, V.1
Soklaski, R.2
Liang, Y.3
Yang, L.4
-
22
-
-
84893864998
-
Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling
-
S. Tongay H. Sahin C. Ko A. Luce W. Fan K. Liu J. Zhou Y.-S. Huang C.-H. Ho J. Yan D. F. Ogletree S. Aloni J. Ji S. Li J. Li F. M. Peeters J. Wu Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling Nat. Commun. 2014 5 3252
-
(2014)
Nat. Commun.
, vol.5
, pp. 3252
-
-
Tongay, S.1
Sahin, H.2
Ko, C.3
Luce, A.4
Fan, W.5
Liu, K.6
Zhou, J.7
Huang, Y.-S.8
Ho, C.-H.9
Yan, J.10
Ogletree, D.F.11
Aloni, S.12
Ji, J.13
Li, S.14
Li, J.15
Peeters, F.M.16
Wu, J.17
-
23
-
-
84958744817
-
2
-
2 Adv. Funct. Mater. 2016 26 8 1169 1177
-
(2016)
Adv. Funct. Mater.
, vol.26
, Issue.8
, pp. 1169-1177
-
-
Liu, F.1
Zheng, S.2
He, X.3
Chaturvedi, A.4
He, J.5
Chow, W.L.6
Mion, T.R.7
Wang, X.8
Zhou, J.9
Fu, Q.10
Fan, H.J.11
Tay, B.K.12
Song, L.13
He, R.-H.14
Kloc, C.15
Ajayan, P.M.16
Liu, Z.17
-
24
-
-
84930482259
-
Highly anisotropic and robust excitons in monolayer black phosphorus
-
X. Wang A. M. Jones K. L. Seyler V. Tran Y. Jia H. Zhao H. Wang L. Yang X. Xu F. Xia Highly anisotropic and robust excitons in monolayer black phosphorus Nat. Nanotechnol. 2015 10 6 517 521
-
(2015)
Nat. Nanotechnol.
, vol.10
, Issue.6
, pp. 517-521
-
-
Wang, X.1
Jones, A.M.2
Seyler, K.L.3
Tran, V.4
Jia, Y.5
Zhao, H.6
Wang, H.7
Yang, L.8
Xu, X.9
Xia, F.10
-
27
-
-
0035943358
-
Highly Polarized Photoluminescence and Photodetection from Single Indium Phosphide Nanowires
-
J. Wang Highly Polarized Photoluminescence and Photodetection from Single Indium Phosphide Nanowires Science 2001 293 5534 1455 1457
-
(2001)
Science
, vol.293
, Issue.5534
, pp. 1455-1457
-
-
Wang, J.1
-
30
-
-
79955474355
-
Facile synthesis of zirconium trisulfide and hafnium trisulfide nanobelts: Growth mechanism and Raman spectroscopy
-
H. Jin D. Cheng J. Li X. Cao B. Li X. Wang X. Liu X. Zhao Facile synthesis of zirconium trisulfide and hafnium trisulfide nanobelts: Growth mechanism and Raman spectroscopy Solid State Sci. 2011 13 5 1166 1171
-
(2011)
Solid State Sci.
, vol.13
, Issue.5
, pp. 1166-1171
-
-
Jin, H.1
Cheng, D.2
Li, J.3
Cao, X.4
Li, B.5
Wang, X.6
Liu, X.7
Zhao, X.8
-
32
-
-
2442701144
-
3 Tightly Bound Trions in Transition Metal Dichalcogenide Heterostructures layer-type compound
-
3 Tightly Bound Trions in Transition Metal Dichalcogenide Heterostructures layer-type compound Chem. Phys. 1981 63 1-2 143 156
-
(1981)
Chem. Phys.
, vol.63
, Issue.12
, pp. 143-156
-
-
Sourisseau, C.1
Mathey, Y.2
-
33
-
-
0037799714
-
Hybrid functionals based on a screened Coulomb potential
-
J. Heyd G. E. Scuseria M. Ernzerhof Hybrid functionals based on a screened Coulomb potential J. Chem. Phys. 2003 118 18 8207 8215
-
(2003)
J. Chem. Phys.
, vol.118
, Issue.18
, pp. 8207-8215
-
-
Heyd, J.1
Scuseria, G.E.2
Ernzerhof, M.3
-
34
-
-
0000901990
-
Optical transitions in the isoelectronically doped semiconductor GaP:N: An evolution from isolated centers, pairs, and clusters to an impurity band
-
Y. Zhang B. Fluegel A. Mascarenhas H. Xin C. Tu Optical transitions in the isoelectronically doped semiconductor GaP:N: An evolution from isolated centers, pairs, and clusters to an impurity band Phys. Rev. B: Condens. Matter 2000 62 7 4493 4500
-
(2000)
Phys. Rev. B: Condens. Matter
, vol.62
, Issue.7
, pp. 4493-4500
-
-
Zhang, Y.1
Fluegel, B.2
Mascarenhas, A.3
Xin, H.4
Tu, C.5
-
35
-
-
0031096013
-
Photoluminescence spectroscopy of crystalline semiconductors
-
G. D. Gilliland Photoluminescence spectroscopy of crystalline semiconductors Mater. Sci. Eng., R 1997 18 3-6 99 399
-
(1997)
Mater. Sci. Eng., R
, vol.18
, Issue.36
, pp. 99-399
-
-
Gilliland, G.D.1
-
36
-
-
84935012644
-
Tightly Bound Trions in Transition Metal Dichalcogenide Heterostructures
-
M. Z. Bellus F. Ceballos H. Chiu H. Zhao Tightly Bound Trions in Transition Metal Dichalcogenide Heterostructures ACS Nano 2015 9 6 6459 6464
-
(2015)
ACS Nano
, vol.9
, Issue.6
, pp. 6459-6464
-
-
Bellus, M.Z.1
Ceballos, F.2
Chiu, H.3
Zhao, H.4
-
37
-
-
84925168208
-
Probing excitonic states in ultraclean suspended two-dimensional semiconductors by photocurrent spectroscopy
-
A. R. Klots A. K. M. Newaz B. Wang D. Prasai H. Krzyzanowska D. Caudel N. J. Ghimire J. Yan B. L. Ivanov K. A. Velizhanin A. Burger D. G. Mandrus N. H. Tolk S. T. Pantelides K. I. Bolotin Probing excitonic states in ultraclean suspended two-dimensional semiconductors by photocurrent spectroscopy Sci. Rep. 2014 4 6608
-
(2014)
Sci. Rep.
, vol.4
, pp. 6608
-
-
Klots, A.R.1
Newaz, A.K.M.2
Wang, B.3
Prasai, D.4
Krzyzanowska, H.5
Caudel, D.6
Ghimire, N.J.7
Yan, J.8
Ivanov, B.L.9
Velizhanin, K.A.10
Burger, A.11
Mandrus, D.G.12
Tolk, N.H.13
Pantelides, S.T.14
Bolotin, K.I.15
-
38
-
-
84884246363
-
Defects activated photoluminescence in two-dimensional semiconductors: Interplay between bound, charged, and free excitons.
-
S. Tongay J. Suh C. Ataca W. Fan A. Luce J. S. Kang J. Liu C. Ko R. Raghunathanan J. Zhou F. Ogletree J. Li J. C. Grossman J. Wu Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged, and free excitons. Sci. Rep. 2013 3 2657
-
(2013)
Sci. Rep.
, vol.3
, pp. 2657
-
-
Tongay, S.1
Suh, J.2
Ataca, C.3
Fan, W.4
Luce, A.5
Kang, J.S.6
Liu, J.7
Ko, C.8
Raghunathanan, R.9
Zhou, J.10
Ogletree, F.11
Li, J.12
Grossman, J.C.13
Wu, J.14
-
40
-
-
84906087866
-
Optical Anisotropy of Semiconductor Nanowires
-
ed. Z. M. Wang, Springer New York, New York, NY
-
J. G. Rivas, O. L. Muskens, M. T. Borgström, S. L. Diedenhofen and E. P. A. M. Bakkers, Optical Anisotropy of Semiconductor Nanowires, in One-Dimensional Nanostructures, ed., Z. M. Wang, Springer New York, New York, NY, 2008, pp. 127-145
-
(2008)
One-Dimensional Nanostructures
, pp. 127-145
-
-
Rivas, J.G.1
Muskens, O.L.2
Borgström, M.T.3
Diedenhofen, S.L.4
Bakkers, E.P.A.M.5
-
41
-
-
80053989577
-
Comprehensive control of optical polarization anisotropy in semiconducting nanowires
-
L. Fang X. Zhao Y.-H. Chiu D. Ko K. M. Reddy T. R. Lemberger N. P. Padture F. Yang E. Johnston-Halperin Comprehensive control of optical polarization anisotropy in semiconducting nanowires Appl. Phys. Lett. 2011 99 14 141101
-
(2011)
Appl. Phys. Lett.
, vol.99
, Issue.14
, pp. 141101
-
-
Fang, L.1
Zhao, X.2
Chiu, Y.-H.3
Ko, D.4
Reddy, K.M.5
Lemberger, T.R.6
Padture, N.P.7
Yang, F.8
Johnston-Halperin, E.9
-
42
-
-
84987725286
-
2 monolayer films
-
2 monolayer films Nano Lett. 2016 10.1021/acs.nanolett.6b02766
-
(2016)
Nano Lett.
-
-
Wu, K.1
Chen, B.2
Yang, S.3
Wang, G.4
Kong, W.5
Cai, H.6
Aoki, T.7
Soignard, E.8
Marie, X.9
Yano, A.10
Suslu, A.11
Urbaszek, B.12
Tongay, S.13
-
43
-
-
0030190741
-
Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
-
G. Kresse J. Furthmüller Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set Comput. Mater. Sci. 1996 6 15 50
-
(1996)
Comput. Mater. Sci.
, vol.6
, pp. 15-50
-
-
Kresse, G.1
Furthmüller, J.2
-
44
-
-
2442537377
-
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
-
G. Kresse J. Furthmüller Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set Phys. Rev. B 1996 54 11169 11186
-
(1996)
Phys. Rev. B
, vol.54
, pp. 11169-11186
-
-
Kresse, G.1
Furthmüller, J.2
-
46
-
-
25744460922
-
Projector augmented-wave method
-
P. E. Blöchl Projector augmented-wave method Phys. Rev. B 1994 50 17953 17979
-
(1994)
Phys. Rev. B
, vol.50
, pp. 17953-17979
-
-
Blöchl, P.E.1
-
47
-
-
33750559983
-
Semiempirical GGA-type density functional constructed with a long-range dispersion correction
-
S. Grimme Semiempirical GGA-type density functional constructed with a long-range dispersion correction J. Comput. Chem. 2006 27 1787 1799
-
(2006)
J. Comput. Chem.
, vol.27
, pp. 1787-1799
-
-
Grimme, S.1
-
48
-
-
0037799714
-
Hybrid functionals based on a screened Coulomb potential
-
J. Heyd G. E. Scuseria M. Ernzerhof Hybrid functionals based on a screened Coulomb potential J. Chem. Phys. 2003 118 8207
-
(2003)
J. Chem. Phys.
, vol.118
, pp. 8207
-
-
Heyd, J.1
Scuseria, G.E.2
Ernzerhof, M.3
|