Two-dimensional gallium nitride realized via graphene encapsulation

Nature Materials

Volumn 15, Issue 11, 2016, Pages 1166-1171

  Al Balushi, Zakaria Y ^a   Wang, Ke ^a   Ghosh, Ram Krishna ^b,c   Vilá, Rafael A ^a   Eichfeld, Sarah M ^a   Caldwell, Joshua D ^d   Qin, Xiaoye ^e   Lin, Yu Chuan ^a   Desario, Paul A ^d   Stone, Greg ^a   Subramanian, Shruti ^a   Paul, Dennis F ^f   Wallace, Robert M ^e   Datta, Suman ^b,c   Redwing, Joan M ^a,c   Robinson, Joshua A ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b UNIVERSITY OF NOTRE DAME   (United States)

^c The Pennsylvania State University   (United States)

^d NAVAL RESEARCH LABORATORY   (United States)

^e The University of Texas at Dallas   (United States)

^f Physical Electronics Inc Minnesota   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONDENSED MATTER PHYSICS; ENERGY GAP; GALLIUM NITRIDE; GRAPHENE;

EPITAXIAL GRAPHENE; EXPERIMENTAL REALIZATIONS; GALLIUM NITRIDES (GAN); HEXAGONAL BORON NITRIDE (H-BN); LAYERED MATERIAL; SPECTRUM OF TWO DIMENSIONAL; WIDE BAND GAP;

NITRIDES;

EID: 84984601387     PISSN: 14761122     EISSN: 14764660     Source Type: Journal    
DOI: 10.1038/nmat4742     Document Type: Article

References (30)

1. Watanabe, K., Taniguchi, T. & Kanda, H. Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal. Nat. Mater. 3, 404-409 (2004).
2. Zhuang, H. L., Singh, A. K. & Hennig, R. G. Computational discovery of single-layer III-V materials. Phys. Rev. B 87, 165415 (2013).
3. Singh, A. K., Zhuang, H. L. & Hennig, R. G. Ab initio synthesis of single-layer III-V materials. Phys. Rev. B 89, 245431 (2014).
4. Singh, A. K. & Hennig, R. G. Computational synthesis of single-layer GaN on refractory materials. Appl. Phys. Lett. 105, 051604 (2014).
5. Simon, J. et al. Polarization-induced Zener tunnel junctions in wide-band-gap heterostructures. Phys. Rev. Lett. 103, 026801 (2009).
6. Kako, S. et al. A gallium nitride single-photon source operating at 200 K. Nat. Mater. 5, 887-892 (2006).
7. Miao, M. S. et al. Polarization-driven topological insulator transition in a GaN/InN/GaN quantum well. Phys. Rev. Lett. 109, 186803 (2012).
8. Freeman, C. L., Claeyssens, F., Allan, N. L. & Harding, J. H. Graphitic nanofilms as precursors to wurtzite films: theory. Phys. Rev. Lett. 96, 066102 (2006).
9. Brus, L. E. Electron-electron and electron-hole interactions in small semiconductor crystallites: The size dependence of the lowest excited electronic state. J. Chem. Phys. 80, 4403-4409 (1984).
10. Tsipas, P. et al. Evidence for graphite-like hexagonal AlN nanosheets epitaxially grown on single crystal Ag(111). Appl. Phys. Lett. 103, 251605 (2013).
11. Bhattacharya, S., Datta, A., Dhara, S. & Chakravorty, D. Growth of two-dimensional GaN in Na-4 mica nanochannels. J. Phys. D 42, 235504 (2009).
12. Tasker, P. W. The stability of ionic crystal surfaces. J. Phys. C 12, 4984 (1979).
13. Noguera, C. Polar oxide surfaces. J. Phys. Condens. Matter 12, R367 (2000).
14. Li, J. &Wang, L.-W. Band-structure-corrected local density approximation study of semiconductor quantum dots and wires. Phys. Rev. B 72, 125325 (2005).
15. Emtsev, K. V. et al. Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide. Nat. Mater. 8, 203-207 (2009).
16. Riedl, C., Coletti, C., Iwasaki, T., Zakharov, A. A. & Starke, U. Quasi-free-standing epitaxial graphene on SiC obtained by hydrogen intercalation. Phys. Rev. Lett. 103, 246804 (2009).
17. Wang, Z. et al. Simultaneous N-intercalation and N-doping of epitaxial graphene on 6H-SiC(0001) through thermal reactions with ammonia. Nano Res. 6, 399-408 (2013).
18. Virojanadara, C., Watcharinyanon, S., Zakharov, A. A. & Johansson, L. I. Epitaxial graphene on 6H-SiC and Li intercalation. Phys. Rev. B 82, 205402 (2010).
19. Schumacher, S. et al. Europium underneath graphene on Ir(111): intercalation mechanism, magnetism, and band structure. Phys. Rev. B 90, 235437 (2014).
20. Petrovi, M. et al. The mechanism of caesium intercalation of graphene. Nat. Commun. 4, 2772 (2013).
21. Al Balushi, Z. Y. et al. The impact of graphene properties on GaN and AlN nucleation. Surf. Sci. 634, 81-88 (2015).
22. Boukhvalov, D. W. & Katsnelson, M. I. Destruction of graphene by metal adatoms. Appl. Phys. Lett. 95, 023109 (2009).
23. Sun, G. F., Jia, J. F., Xue, Q. K. & Li, L. Atomic-scale imaging and manipulation of ridges on epitaxial graphene on 6H-SiC(0001). Nanotechnology 20, 355701 (2009).
24. Alaskar, Y. et al. Towards van derWaals epitaxial growth of GaAs on Si using a graphene bu-er layer. Adv. Funct. Mater. 24, 6629-6638 (2014).
25. Huang, W., Gan, L., Li, H., Ma, Y. & Zhai, T. 2D layered group IIIA metal chalcogenides: synthesis, properties and applications in electronics and optoelectronics. Cryst. Eng. Comm. 18, 3968-3984 (2016).
26. Findlay, S. D. et al. Robust atomic resolution imaging of light elements using scanning transmission electron microscopy. Appl. Phys. Lett. 95, 191913 (2009).
27. Northrup, J. E., Neugebauer, J., Feenstra, R. M. & Smith, A. R. Structure of GaN(0001): the laterally contracted Ga bilayer model. Phys. Rev. B 61, 9932-9935 (2000).
28. Espitia-Rico, M., Rodríguez-Martínez, J. A., Moreno-Armenta, M. G. & Takeuchi, N. Graphene monolayers on GaN(0001). Appl. Surf. Sci. 326, 7-11 (2015).
29. Carey, N. M., Armiento, R., Yakimova, R. & Abrikosov, I. A. Charge neutrality in epitaxial graphene on 6H-SiC(0001) via nitrogen intercalation. Phys. Rev. B 92, 081409 (2015).
30. Caldwell, J. D. et al. Atomic-scale photonic hybrids for mid-infrared and terahertz nanophotonics. Nat. Nanotech. 11, 9-15 (2016).