|
Volumn 6, Issue 73, 2016, Pages 68663-68674
|
Effect of the thickness of the ZnO buffer layer on the properties of electrodeposited p-Cu2O/n-ZnO/n-AZO heterojunctions
|
Author keywords
[No Author keywords available]
|
Indexed keywords
ATOMIC FORCE MICROSCOPY;
BUFFER LAYERS;
CARRIER CONCENTRATION;
ELECTRODEPOSITION;
ELECTRODES;
ENAMELS;
ENERGY GAP;
FIELD EMISSION MICROSCOPES;
HETEROJUNCTIONS;
METALLIC FILMS;
NANOSTRUCTURES;
SCANNING ELECTRON MICROSCOPY;
SEMICONDUCTING FILMS;
THIN FILMS;
X RAY DIFFRACTION ANALYSIS;
ZINC OXIDE;
ZINC SULFIDE;
ELECTROCHEMICAL IMPEDANCE ANALYSIS;
FIELD EMISSION SCANNING ELECTRON MICROSCOPY;
HETEROJUNCTION SOLAR CELLS;
HEXAGONAL WURTZITE STRUCTURE;
N-TYPE CONDUCTIVITY;
P TYPE CONDUCTIVITY;
PREFERENTIAL ORIENTATION;
RECTIFYING BEHAVIORS;
COPPER;
|
EID: 84979879984
PISSN: None
EISSN: 20462069
Source Type: Journal
DOI: 10.1039/c6ra04834j Document Type: Article |
Times cited : (37)
|
References (67)
|