-
1
-
-
28844477210
-
Z2 topological order and the quantum spin hall effect
-
Kane, C. L. & Mele, E. J. Z2 topological order and the quantum spin Hall effect. Phys. Rev. Lett. 95, 146802 (2005).
-
(2005)
Phys. Rev. Lett
, vol.95
, pp. 146802
-
-
Kane, C.L.1
Mele, E.J.2
-
2
-
-
78349239882
-
Colloquium: Topological insulators
-
Hasan, M. Z. & Kane, C. L. Colloquium: Topological insulators. Rev. Mod. Phys. 82, 3045-3067 (2010).
-
(2010)
Rev. Mod. Phys
, vol.82
, pp. 3045-3067
-
-
Hasan, M.Z.1
Kane, C.L.2
-
3
-
-
77949375457
-
The birth of topological insulators
-
Moore, J. E. The birth of topological insulators. Nature (London) 464, 194-198 (2010).
-
(2010)
Nature (London
, vol.464
, pp. 194-198
-
-
Moore, J.E.1
-
4
-
-
33845708953
-
Quantum spin hall effect and topological phase transition in hgte quantum wells
-
Bernevig, B. A., Hughes, T. L. & Zhang, S.-C. Quantum spin Hall effect and topological phase transition in HgTe quantum wells. Science 314, 1757-1761 (2006).
-
(2006)
Science
, vol.314
, pp. 1757-1761
-
-
Bernevig, B.A.1
Hughes, T.L.2
Zhang, S.-C.3
-
5
-
-
38949129028
-
Quantum spin hall insulator state in hgte quantum wells
-
König, M. et al. Quantum spin Hall insulator state in HgTe quantum wells. Science 318, 766-770 (2007).
-
(2007)
Science
, vol.318
, pp. 766-770
-
-
König, M.1
-
6
-
-
45249103494
-
Quantum spin hall effect in inverted type-II semiconductors
-
Liu, C., Hughes, T. L., Qi, X.-L., Wang, K. & Zhang, S.-C. Quantum spin Hall effect in inverted type-II semiconductors. Phys. Rev. Lett. 100, 236601 (2008).
-
(2008)
Phys. Rev. Lett
, vol.100
, pp. 236601
-
-
Liu, C.1
Hughes, T.L.2
Qi, X.-L.3
Wang, K.4
Zhang, S.-C.5
-
7
-
-
67650986307
-
Nonlocal transport in the quantum spin hall state
-
Roth, A. et al. Nonlocal transport in the quantum spin Hall state. Science 325, 294-297 (2009).
-
(2009)
Science
, vol.325
, pp. 294-297
-
-
Roth, A.1
-
8
-
-
80051498457
-
Quantum spin hall effect in silicene and two-dimensional germanium
-
Liu, C. C., Feng, W. X. & Yao, Y. G. Quantum spin Hall effect in silicene and two-dimensional germanium. Phys. Rev. Lett. 107, 076802 (2011).
-
(2011)
Phys. Rev. Lett
, vol.107
, pp. 076802
-
-
Liu, C.C.1
Feng, W.X.2
Yao, Y.G.3
-
9
-
-
84884692935
-
Large-gap quantum spin hall insulators in tin films
-
Xu, Y. et al. Large-gap quantum spin Hall insulators in tin films. Phys. Rev. B 111, 136804 (2013).
-
(2013)
Phys. Rev. B
, vol.111
, pp. 136804
-
-
Xu, Y.1
-
10
-
-
80053211474
-
Stable nontrivial z2 topology in ultrathin bi 111) films: A first-principles study
-
Liu, Z. et al. Stable nontrivial Z2 topology in ultrathin Bi (111) films: a first-principles study. Phys. Rev. Lett. 107, 136805 (2011).
-
(2011)
Phys. Rev. Lett
, vol.107
, pp. 136805
-
-
Liu, Z.1
-
11
-
-
84898712548
-
H. Functionalized germanene as a prototype of large-gap two-dimensional topological insulators
-
Si, C. et al. H. Functionalized germanene as a prototype of large-gap two-dimensional topological insulators. Phys. Rev. B 89, 115429 (2014).
-
(2014)
Phys. Rev. B
, vol.89
, pp. 115429
-
-
Si, C.1
-
12
-
-
84921717139
-
Quantum spin hall insulators and quantum valley hall insulators of bix/sbx (x= h, f, cl and br) monolayers with a record bulk band gap
-
Song, Z. et al. Quantum spin Hall insulators and quantum valley Hall insulators of BiX/SbX (X= H, F, Cl and Br) monolayers with a record bulk band gap. NPG Asia Mater. 6, e147 (2014).
-
(2014)
NPG Asia Mater
, vol.6
, pp. e147
-
-
Song, Z.1
-
14
-
-
84922796338
-
Robust two-dimensional topological insulators in methyl-functionalized bismuth, antimony, and lead bilayer films
-
Ma, Y. D., Dai, Y., Kou, L. Z., Frauenheim, T. & Heine, T. Robust two-dimensional topological insulators in methyl-functionalized bismuth, antimony, and lead bilayer films. Nano Lett. 15, 1083-1089 (2015).
-
(2015)
Nano Lett
, vol.15
, pp. 1083-1089
-
-
Ma, Y.D.1
Dai, Y.2
Kou, L.Z.3
Frauenheim, T.4
Heine, T.5
-
15
-
-
84923668533
-
Arsenene: Two-dimensional buckled and puckered honeycomb arsenic systems
-
Kamal, C. & Ezawa, M. Arsenene: Two-dimensional buckled and puckered honeycomb arsenic systems. Phys. Rev. B 91, 085423 (2015).
-
(2015)
Phys. Rev. B
, vol.91
, pp. 085423
-
-
Kamal, C.1
Ezawa, M.2
-
16
-
-
84947436342
-
Atomically thin arsenene and antimonene: Semimetal-semiconductor and indirect-direct band-gap transitions
-
Zhang, S. L., Yan, Z., Li, Y. F., Chen, Z. F. & Zeng, H. B. Atomically thin arsenene and antimonene: Semimetal-semiconductor and indirect-direct band-gap transitions. Angew. Chem. 127, 3155-3158 (2015).
-
(2015)
Angew. Chem
, vol.127
, pp. 3155-3158
-
-
Zhang, S.L.1
Yan, Z.2
Li, Y.F.3
Chen, Z.F.4
Zeng, H.B.5
-
17
-
-
84925939839
-
Structural and electronic properties of layered arsenic and antimony arsenide
-
Kou, L. Z. et al. Structural and electronic properties of layered arsenic and antimony arsenide. J. Phys. Chem. C 119(12), 6918-6922 (2015).
-
(2015)
J. Phys. Chem. C
, vol.119
, Issue.12
, pp. 6918-6922
-
-
Kou, L.Z.1
-
18
-
-
84898060562
-
Phosphorene: An unexplored 2d semiconductor with a high hole mobility
-
Liu, H. et al. Phosphorene: an unexplored 2D semiconductor with a high hole mobility. ACS Nano 8(4), 4033-4041 (2014).
-
(2014)
ACS Nano
, vol.8
, Issue.4
, pp. 4033-4041
-
-
Liu, H.1
-
19
-
-
84901193930
-
Black phosphorus field-effect transistors
-
Li, L. K. et al. Black phosphorus field-effect transistors. Nat. Nanotechnol. 9, 372-377 (2014).
-
(2014)
Nat. Nanotechnol
, vol.9
, pp. 372-377
-
-
Li, L.K.1
-
20
-
-
84947217408
-
Quantum spin hall insulators in strain-modified arsenene
-
Zhang, H. J., Ma, Y. D. & Chen, Z. F. Quantum spin Hall insulators in strain-modified arsenene. Nanoscale 7, 19152-19159 (2015).
-
(2015)
Nanoscale
, vol.7
, pp. 19152-19159
-
-
Zhang, H.J.1
Ma, Y.D.2
Chen, Z.F.3
-
21
-
-
70249150347
-
Tuning electronic and magnetic properties of graphene by surface modification
-
Zhou, J., Wu, M. M., Zhou, X. & Sun, Q. Tuning electronic and magnetic properties of graphene by surface modification. Appl. Phys. Lett. 95, 103108 (2009).
-
(2009)
Appl. Phys. Lett
, vol.95
, pp. 103108
-
-
Zhou, J.1
Wu, M.M.2
Zhou, X.3
Sun, Q.4
-
22
-
-
84904759408
-
Edge state modulation of bilayer bi nanoribbons by atom adsorption
-
Chen, L. et al. Edge state modulation of bilayer Bi nanoribbons by atom adsorption. Phys. Chem. Chem. Phys. 16, 17206-17212 (2014).
-
(2014)
Phys. Chem. Chem. Phys
, vol.16
, pp. 17206-17212
-
-
Chen, L.1
-
23
-
-
84952800394
-
Hydrogenated arsenenes as planar magnet and Dirac material
-
Zhang, S. L., Hu, Y. H., Hu, Z. Y., Cai, B. & Zeng, H. B. Hydrogenated arsenenes as planar magnet and Dirac material. Appl. Phys. Lett. 107, 022102 (2015).
-
(2015)
Appl. Phys. Lett
, vol.107
, pp. 022102
-
-
Zhang, S.L.1
Hu, Y.H.2
Hu, Z.Y.3
Cai, B.4
Zeng, H.B.5
-
24
-
-
84939190719
-
Quantum spin-quantum anomalous hall insulators and topological transitions in functionalized sb111) monolayers
-
Zhou, T., Zhang, J. Y., Zhao, B., Zhang, H. S. & Yang, Z. Q. Quantum spin-quantum anomalous Hall insulators and topological transitions in functionalized Sb (111) monolayers. Nano Lett. 15(8), 5149-5155 (2015).
-
(2015)
Nano Lett
, vol.15
, Issue.8
, pp. 5149-5155
-
-
Zhou, T.1
Zhang, J.Y.2
Zhao, B.3
Zhang, H.S.4
Yang, Z.Q.5
-
25
-
-
84963642771
-
Robust large-gap quantum spin hall insulators in chemically decorated arsenene films
-
Wang, D. C. et al. Robust large-gap quantum spin Hall insulators in chemically decorated arsenene films. New J. Phys. 18, 033026 (2016).
-
(2016)
New J. Phys
, vol.18
, pp. 033026
-
-
Wang, D.C.1
-
26
-
-
0030190741
-
Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
-
Kresse, G. & Furthmuller, J. Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set. Comput. Mater. Sci. 6, 15 (1996).
-
(1996)
Comput. Mater. Sci
, vol.6
, pp. 15
-
-
Kresse, G.1
Furthmuller, J.2
-
27
-
-
4243943295
-
Generalized gradient approximation made simple
-
Perdew, J. P., Burke, K. & Ernzerhof, M. Generalized gradient approximation made simple. Phys. Rev. Lett. 77, 3865 (1996).
-
(1996)
Phys. Rev. Lett
, vol.77
, pp. 3865
-
-
Perdew, J.P.1
Burke, K.2
Ernzerhof, M.3
-
28
-
-
55149100594
-
First-principles calculations of the ferroelastic transition between rutile-type and cacl2-type sio2 at high pressures
-
Togo, A., Oba, F. & Tanaka, I. First-principles calculations of the ferroelastic transition between rutile-type and CaCl2-type SiO2 at high pressures. Phys. Rev. B 78, 134106 (2008).
-
(2008)
Phys. Rev. B
, vol.78
, pp. 134106
-
-
Togo, A.1
Oba, F.2
Tanaka, I.3
-
29
-
-
84864271382
-
Band gaps and structural properties of graphene halides and their derivates: A hybrid functional study with localized orbital basis sets
-
Karlický, F., Zboil, R. & Otyepka, M. Band gaps and structural properties of graphene halides and their derivates: A hybrid functional study with localized orbital basis sets. J. Chem. Phys. 137, 034709 (2012).
-
(2012)
J. Chem. Phys
, vol.137
, pp. 034709
-
-
Karlický, F.1
Zboil, R.2
Otyepka, M.3
-
30
-
-
84862206479
-
Halogenated two-dimensional germanium: Candidate materials for being of quantum spin hall state
-
Ma, Y. D., Dai, Y., Niu, C. W. & Huang, B. B. Halogenated two-dimensional germanium: candidate materials for being of Quantum Spin Hall state. J. Mater. Chem. 22, 12587-12591 (2012).
-
(2012)
J. Mater. Chem
, vol.22
, pp. 12587-12591
-
-
Ma, Y.D.1
Dai, Y.2
Niu, C.W.3
Huang, B.B.4
-
31
-
-
84910118081
-
Low-energy effective hamiltonian for giant-gap quantum spin hall insulators in honeycomb x-hydride/halide (x = n-bi) monolayers
-
Liu, C. C. et al. Low-energy effective Hamiltonian for giant-gap quantum spin Hall insulators in honeycomb X-hydride/halide (X = N-Bi) monolayers. Phys. Rev. B 90, 085431 (2014).
-
(2014)
Phys. Rev. B
, vol.90
, pp. 085431
-
-
Liu, C.C.1
-
32
-
-
82955241229
-
Density functional theory calculations for two-dimensional silicene with halogen functionalization
-
Gao, N., Zheng, W. T. & Jiang, Q. Density functional theory calculations for two-dimensional silicene with halogen functionalization. Phys. Chem. Chem. Phys. 14, 257-261 (2012).
-
(2012)
Phys. Chem. Chem. Phys
, vol.14
, pp. 257-261
-
-
Gao, N.1
Zheng, W.T.2
Jiang, Q.3
-
33
-
-
84862301291
-
Intriguing behavior of halogenated two-dimensional tin
-
Ma, Y. D., Dai, Y., Guo, M., Niu, C. W. & Huang, B. B. Intriguing behavior of halogenated two-dimensional tin. J. Phys. Chem. C 116(23), 12977-12981 (2012).
-
(2012)
J. Phys. Chem. C
, vol.116
, Issue.23
, pp. 12977-12981
-
-
Ma, Y.D.1
Dai, Y.2
Guo, M.3
Niu, C.W.4
Huang, B.B.5
-
34
-
-
84908052844
-
Edge engineering of a topological bi 111) bilayer
-
Li, X., Liu, H. W., Jiang, H., Wang, F. & Feng, J. Edge engineering of a topological Bi (111) bilayer. Phys. Rev. B 90, 165412 (2014).
-
(2014)
Phys. Rev. B
, vol.90
, pp. 165412
-
-
Li, X.1
Liu, H.W.2
Jiang, H.3
Wang, F.4
Feng, J.5
-
35
-
-
84910117703
-
Hydrogenated ultra-thin tin films predicted as two-dimensional topological insulators
-
Chou, B. H. et al. Hydrogenated ultra-thin tin films predicted as two-dimensional topological insulators. New J. Phys. 16, 115008 (2014).
-
(2014)
New J. Phys
, vol.16
, pp. 115008
-
-
Chou, B.H.1
-
36
-
-
28844477796
-
Quantum spin hall effect in graphene
-
Kane, C. L. & Mele, E. J. Quantum Spin Hall Effect in Graphene. Phys. Rev. Lett. 95, 226801 (2005).
-
(2005)
Phys. Rev. Lett
, vol.95
, pp. 226801
-
-
Kane, C.L.1
Mele, E.J.2
-
37
-
-
84922789370
-
Giant topological nontrivial band gaps in chloridized gallium bismuthide
-
Li, L. Y., Zhang, X. M., Chen, X. & Zhao, M. W. Giant topological nontrivial band gaps in chloridized gallium bismuthide. Nano Lett. 15(2), 1296-1301 (2015).
-
(2015)
Nano Lett
, vol.15
, Issue.2
, pp. 1296-1301
-
-
Li, L.Y.1
Zhang, X.M.2
Chen, X.3
Zhao, M.W.4
-
38
-
-
34347373900
-
Topological insulators with inversion symmetry
-
Fu, L. & Kane, C. L. Topological insulators with inversion symmetry. Phys. Rev. B 76, 045302 (2007).
-
(2007)
Phys. Rev. B
, vol.76
, pp. 045302
-
-
Fu, L.1
Kane, C.L.2
-
39
-
-
48049104171
-
Length dependent conductance of molecular wires and contact resistance in metal-molecule-metal junctions
-
Liu, H. M. et al. Length dependent conductance of molecular wires and contact resistance in metal-molecule-metal junctions. ChemPhysChem 9, 1416-1424 (2008).
-
(2008)
ChemPhysChem
, vol.9
, pp. 1416-1424
-
-
Liu, H.M.1
-
40
-
-
33845290260
-
Quantum spin hall effect and enhanced magnetic response by spin-orbit coupling
-
Murakami, S. Quantum spin Hall effect and enhanced magnetic response by spin-orbit coupling. Phys. Rev. Lett. 97, 236805 (2006).
-
(2006)
Phys. Rev. Lett
, vol.97
, pp. 236805
-
-
Murakami, S.1
-
41
-
-
84907764313
-
Epitaxial growth of large-gap quantum spin hall insulator on semiconductor surface
-
Zhou, M. et al. Epitaxial growth of large-gap quantum spin Hall insulator on semiconductor surface. Proc. Natl. Acad. Sci. 111, 14378 (2014).
-
(2014)
Proc. Natl. Acad. Sci
, vol.111
, pp. 14378
-
-
Zhou, M.1
-
42
-
-
84923112415
-
Driving a gaas film to a large-gap topological insulator by tensile strain
-
Zhao, M. W., Chen, X., Li, L. Y. & Zhang, X. M. Driving a GaAs film to a large-gap topological insulator by tensile strain. Sci. Rep. 5, 8441 (2015).
-
(2015)
Sci. Rep
, vol.5
, pp. 8441
-
-
Zhao, M.W.1
Chen, X.2
Li, L.Y.3
Zhang, X.M.4
-
43
-
-
84922789370
-
Giant topological nontrivial band gaps in chloridized gallium bismuthide
-
Li, L. Y., Zhang, X. M., Chen, X. & Zhao, M. W. Giant topological nontrivial band gaps in chloridized gallium bismuthide. Nano Lett. 15(2), 1296-1301 (2015).
-
(2015)
Nano Lett
, vol.15
, Issue.2
, pp. 1296-1301
-
-
Li, L.Y.1
Zhang, X.M.2
Chen, X.3
Zhao, M.W.4
-
44
-
-
84946594672
-
Strain-driven band inversion and topological aspects in antimonene
-
Zhao, M. W., Zhang, X. M. & Li, L. Y. Strain-driven band inversion and topological aspects in Antimonene. Sci. Rep. 5, 16108 (2015).
-
(2015)
Sci. Rep
, vol.5
, pp. 16108
-
-
Zhao, M.W.1
Zhang, X.M.2
Li, L.Y.3
-
45
-
-
84942010828
-
Prediction of a large-gap quantum spin hall insulator: Diamond-like gabi bilayer
-
Wang, A. Z., Du, A. J. & Zhao, M. W. Prediction of a large-gap quantum spin Hall insulator: Diamond-like GaBi bilayer. Nano Research 8, 3823-3829 (2015).
-
(2015)
Nano Research
, vol.8
, pp. 3823-3829
-
-
Wang, A.Z.1
Du, A.J.2
Zhao, M.W.3
-
46
-
-
38949129028
-
Quantum spin hall insulator state in hgte quantum wells
-
König, M. et al. Quantum spin Hall insulator state in HgTe quantum wells. Science 318, 1148047 (2007).
-
(2007)
Science
, vol.318
, pp. 1148047
-
-
König, M.1
-
47
-
-
84963642771
-
Robust large-gap quantum spin hall insulators in chemically decorated arsenene films
-
Wang, D. C. et al. Robust large-gap quantum spin Hall insulators in chemically decorated arsenene films. New J. Phys. 18, 033026 (2016).
-
(2016)
New J. Phys
, vol.18
, pp. 033026
-
-
Wang, D.C.1
|