Thermal dehydrogenation of amorphous silicon deposited on c-Si: Effect of the substrate temperature during deposition

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 9, Issue 10-11, 2012, Pages 2198-2202

  de Calheiros Velozo, A ^a   Lavareda, G ^b   Nunes de Carvalho, C ^a,b   Amaral, A ^a  

^a INSTITUTO SUPERIOR TÉCNICO   (Portugal)

^b UNIVERSIDADE NOVA DE LISBOA   (Portugal)

Author keywords

A Si:H dehydrogenation; A Si:H hydrogen content; FTIR

Indexed keywords

A-SI THIN FILMS; A-SI:H; AS-DEPOSITED FILMS; DEPOSITION TEMPERATURES; FTIR; H-CONTENT; HYDROGEN CONCENTRATION; HYDROGEN CONTENTS; JUNCTION DEPTH; OPTICAL GAP; PHOSPHORUS-DOPED; SPECIFIC MATERIALS; SUBSTRATE TEMPERATURE; THERMAL ACTIVATION ENERGIES; THERMAL DEHYDROGENATION;

DEPOSITS; DOPING (ADDITIVES); HYDROGEN; PHOSPHORUS; SILICON;

DEHYDROGENATION;

EID: 84867933771     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201200194     Document Type: Article

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