Gas cluster ion beam processing of SOI surfaces for improved gate oxide integrity

IEEE International SOI Conference

Volumn , Issue , 2001, Pages 35-36

  Allen, L P ^a   Hautala, J ^a   Santeufemio, C ^a   Brooks, W ^a   Fenner, D B ^a   Lucking, T ^a   Liu, M ^a  

^a Epion Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CAPACITORS; DIELECTRIC MATERIALS; ION BEAMS; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; VOLTAGE MEASUREMENT;

GAS CLUSTER ION BEAM (GCIB); GATE OXIDE INTEGRITY (GOI);

GATES (TRANSISTOR);

EID: 0035158881     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. Integrity of gate oxides formed on SIMOX wafers
2. SOI CMOS technology for low power electronics
3. Materials, device and gate oxide integrity evaluation of SIMOX and bonded SOI wafers
4. Surface processing by gas cluster ion beam technology
5. Gate oxide integrity testing on SOI wafers without test structure fabrication