SOI uniformity and surface smoothness improvement using GCIB processing

IEEE International SOI Conference

Volumn , Issue , 2002, Pages 192-193

  Allen, L P ^a   Caliendo, S ^a   Hofmeester, N ^a   Harrington, E ^a   Walsh, M ^a   Tabat, M ^a   Tetreault, T G ^a   Degenkolb, E ^a   Santeufemio, C ^a  

^a Epion Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELLIPSOMETRY; ION BEAMS; SEMICONDUCTOR DEVICE MANUFACTURE; SURFACE PHENOMENA; X RAY PHOTOELECTRON SPECTROSCOPY;

GAS CLUSTER ION BEAM (GCIB) PROCESSING;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0036454459     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/soi.2002.1044472     Document Type: Conference Paper

References (3)

1. R. Chau, J. Kavalieros, B. Doyle, A. Murthy, N. Paulsen, D. Lionberger, D. Barlage, R. Arghavani, B. Roberds, and M. Doczy, International Electron Devices Meeting, Dec. 3-7, 2001, Washington D.C. p. 29.1.1.
2. I. Yamada, J. Matsuo, N. Toyoda, A. Kirkpatrick, in Materials Science and Engineering R 34 (2001) 231-295.
3. L.P. Allen, Z. Insepov, D.B. Fenner, C. Santeufemio, W. Brooks, K.S. Jones, I. Yamada, accepted for Journal of Applied Physics, in press.