Comparison of extreme ultraviolet sources for lithography applications

Microelectronic Engineering

Volumn 53, Issue 1, 2000, Pages 681-684

  Banine, V Y ^a   Benschop, J P H ^a   Werij, H G C ^b  

^a ASML   (Netherlands)

^b TNO   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

GASES; GRAPH THEORY; LASER PRODUCED PLASMAS; MIRRORS; MULTILAYERS; OPTICS; SILICON WAFERS; SYNCHROTRONS;

EXTREME ULTRAVIOLET LITHOGRAPHY; GAS DISCHARGE; PROJECTION MULTILAYER OPTICS; RESISTS SENSITIVITY; SYNCHROTRON WIGGLER;

PHOTORESISTS;

EID: 0034206989     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(00)00404-4     Document Type: Article

References (11)

1. 1. C. Gwyn, et al, EUV LLC White Paper, Livermore, CA, USA, 1998.
2. 2. D.C. Ockwell et al, presented at EIPBN 1999, due for publication in the Journal of Vacuum Science and Technology.
3. 3. M. McGeoch, Applied Optics, vol. 37, 9 (1998) 1651;
4. 4. M. McGeoch, Proc. SPIE, vol. 3676 (1999) 697 .
5. 5. M. A. Klosner and W. T. Silfvast, Opt. Lett. 23 (1998), 16 09.
6. 6. W. T. Silfvast et al, Proc. SPIE, vol. 3676 (1999) 272.
7. 7. W. Partlo et al, Proc. SPIE, vol. 3676 (1999) 846.
8. 8. M. McGeoch, Private communication.
9. 9. L.A. Shmaenok et al, Proc. SPIE, vol. 3331, (1998) 90.
10. 10. B. Mertens et al, "Mitigation of Surface Contamination from Resist Outgassing in EUV Lithography", to be published at this conference.
11. 11. D.C. Ockwell, Private communication.