Sn-loss effect in a Sn-implanted a-SiO 2 host-matrix after thermal annealing: A combined XPS, PL, and DFT study

Applied Surface Science

Volumn 367, Issue , 2016, Pages 320-326

  Zatsepin, D A ^a,b   Zatsepin, A F ^b   Boukhvalov, D W ^c,d   Kurmaev, E Z ^a,b   Gavrilov, N V ^e  

^a INSTITUTE OF METAL PHYSICS   (Russian Federation)

^b URAL FEDERAL UNIVERSITY   (Russian Federation)

^c Hanyang University   (South Korea)

^d URAL FEDERAL UNIVERSITY   (Russian Federation)

^e INSTITUTE OF ELECTROPHYSICS   (Russian Federation)

Author keywords

DFT modeling; Ion implantation; Photoluminescence; Quartz; Soft X ray

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; ELECTRONIC STRUCTURE; ION IMPLANTATION; IONS; PHOTOLUMINESCENCE; QUARTZ; SILICA; TEMPERING; VALENCE BANDS; X RAYS;

DFT MODELING; FORMATION ENERGIES; INTERSTITIAL VOIDS; SOFT X-RAY; STRUCTURE CHARACTERIZATION; SUBSTITUTIONAL DEFECTS; THERMAL TEMPERING; THERMAL-ANNEALING;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 84959422849     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2016.01.126     Document Type: Article

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