Photoluminescence of Se-related oxygen deficient center in ion-implanted silica films

Journal of Luminescence

Volumn 143, Issue , 2013, Pages 498-502

  Zatsepin, A F ^a   Buntov, E A ^a   Pustovarov, V A ^a   Fitting, H J ^b  

^a URAL FEDERAL UNIVERSITY   (Russian Federation)

^b UNIVERSITY OF ROSTOCK   (Germany)

Author keywords

Ion implantation; Oxygen deficient centers; Photoluminescence; Selenium; Silica films

Indexed keywords

DEFECT ENERGY; LOW TEMPERATURES; OXYGEN DEFICIENT CENTERS; PL EXCITATIONS; SILICA FILM; SPECTRAL CHARACTERISTICS; SPECTRAL REGION; TIME-RESOLVED PHOTOLUMINESCENCE;

ELECTRONIC PROPERTIES; ENERGY TRANSFER; GERMANIUM; ION IMPLANTATION; IONS; OXYGEN; SELENIUM; SILICA;

PHOTOLUMINESCENCE;

EID: 84879586931     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jlumin.2013.05.041     Document Type: Article

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