Direct and polymer bonding of III-V to processed silicon-on-insulator for hybrid silicon evanescent lasers fabrication

ECS Transactions

Volumn 33, Issue 4, 2010, Pages 403-410

  Bordel, D ^a   Argoud, M ^a   Augendre, E ^a   Harduin, J ^a   Philippe, P ^a   Olivier, N ^a   Messaoudene S ^a   Gilbert, K ^a   Grosse, P ^a   Ben Bakir, B ^a   Fedeli, J M ^a  

^a CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

FABRICATION; SEMICONDUCTOR LASERS; SILICON ON INSULATOR TECHNOLOGY; TEMPERATURE; WAFER BONDING;

BONDING INTERFACES; INNOVATIVE DESIGN; LOW TEMPERATURES; POLYMER BONDING; QUASI-CONTINUOUS WAVES; SIDE MODE SUPPRESSION RATIOS; SILICON-ON-INSULATOR SUBSTRATES; TEMPERATURE THRESHOLDS;

SILICON WAFERS;

EID: 79952689003     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3483530     Document Type: Conference Paper

References (26)

1. G.T. Reed, Nature, 427,595 (2004).
2. B. Ben Bakir, A. Vazquez de Gyves, R. Orobtchouk, P. Lyan, C. Porzier, A. Roman, and J-M. Fedeli, to appear in IEEE Phot. Tech. Letters.
3. K. K. Lee, D. R. Lim, D. Pan, C. Hoepfher, W-Y. Oh, K. Wada, L.C. Kimerling, K.P. Yap, M.T. Doan, Opt. Lett., 30(5), 498 (2005).
4. D. Marris-Morini, L. Vivien, J-M. Fédéli, E. Cassan, Ph. Lyan, S. Laval, Opt. Express, 16(1), 334 (2008).
5. L. Vivien, M. Rouvière, J-M Fédéli, D. Marris-Morini, J.F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, Opt. Express, 15(15), 9843 (2007).
6. J.M. Fedeli et al., Advances in Optical Technologies, 412518 (2008).
7. H. Kromer, T.-Y. Liu, and P. M. Petroff, J. Cryst. Growth, 95,96 (1989).
8. O. Boyraz, and B. Jalali, Opt. Express, 12, 5269 (2004).
9. H. Rong, Nature, 433, 725 (2005).
10. B. Gelloz, A. Kojima, and N. Koshida, Appl. Phys. Lett., 87(3), 031107 (2005).
11. L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, Nature, 408, 440 (2000).
12. K. Solehmainen, M. Kapulainen, P. Heimala, and K. Polamo, IEEE Phot. Tech. Letters, 16(1), 194(2004).
13. J. Liu, X. Sun, R. C. Aguilera, L. C Kimerling, and J. Michel, Opt. Lett., 35 (5), 679 (2010).
14. K. Kato, and Y. Tohmori, IEEE J. Sel. Tops. Quantum Electron, 6,4 (2000).
15. J. Sasaki, M. Itoh, .T. Tamanuki, H. Hatakeyama, S. Kitamura, T. Shimoda, T. Kato, IEEE Transactions on Advanced Packaging, 24, 569 (2001).
16. M. Kostrzewa, L. Di Cioccio, M. Zussy, J.C. Roussin, J.M. Fedeli, N. Kernevez, P. Regreny, C. Lagahe-Blanchard, B. Aspar, Sens. Act. A, 125, 411 (2006)
17. P. Gueguen, C. Ventosa, L. Di Cioccio, H. Moriceau, F. Grossi, M. Rivoire, P. Leduc, L. Clavelier, Microelectronic Engineering, 87 477-484 (2010)
18. A. W. Fang, H. Park, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, Opt. Express, 14, 9203 (2006).
19. X. Sun, A. Zadok, M. J. Shearn, K.A. Diest, A. Ghaffari, H.A. Atwater, A. Scherer, and A. Yariv, Opt. Lett., 34(9), 1345 (2009).
20. A. W. Fang, R. Jones, H. Park, O. Cohen, O. Raday, M. J. Paniccia, and J. E. Bowers, Opt. Express, 15, 2315 (2007).
21. A. W. Fang, E. Lively, Y.-H. Kuo, D. Liang, and J. E.Bowers, Opt. Express, 16, 4413 (2008).
22. A. Yariv and X. K. Sun, Opt. Express, 15, 9147 (2007).
23. A. Karim, et al. IEEE Photon. Technol. Lett., 12, 1438, (2000).
24. B. Ben Bakir, N. Olivier, Ph. Grosse, S. Messaoudène, S. Brision, E. Augendre, P. Philippe, K. Gilbert, D. Bordel, J. Harduin and J-M. Fedeli , SPIE Photonics Europe, 7719, 50 (2010)
25. S. Vincent, I. Radu, D. Landru, F. Letertre, and F. Rieutord, Appl. Phys. Lett., 94, 101914(2009).
26. G. Roelkens, J. Van Campenhout, J. Brouckaert, D. Van Thourhout, R. Baets, P. Rojo Romeo, P. Regreny, A. Kazmierczak, C. Seassal, X. Letartre, G. Hollinger, J.M. Fedeli, L. Di Cioccio, and C. Lagahe-Blanchard , Materials Today, 10, 36 (2007)